Kazantsev Dmitrii Yur'evich

Publications in Math-Net.Ru

1. Development and study of the $p$–$i$–$n$-диодов GaAs/AlGaAs tunnel diodes for multijunction converters of high-power laser radiation
   
   Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  285–291
2. Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  22–24
3. Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1512–1518
4. Quantum yield of a silicon XUV avalanche photodiode in the 320–1100 nm wavelength range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  10–13
5. Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  22–25
6. Characteristics of a silicon avalanche photodiode for the near-IR spectral range
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  40–42
7. Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  21–24
8. Change in the character of biaxial stresses with an increase in $x$ from 0 to 0.7 in Al$_{x}$Ga$_{1-x}$N:Si layers obtained by ammonia molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  233–237
9. Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths
   
   Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  48–56
10. A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  17–24
11. The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  44–50
12. Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1696
13. Formation of a $p$-type emitter with the involvement of surfactants in GaAs photoelectric converters
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  699–703
14. A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  78–86
15. Electrochemical lithiation of silicon with varied crystallographic orientation
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  979–986
16. Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  57–63
17. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  85–91