Kazantsev Dmitrii Yur'evich

Publications in Math-Net.Ru

1. Photovoltaic laser power converter based on germanium
   
   Zhurnal Tekhnicheskoi Fiziki, 94:5 (2024),  801–807
2. Study of growth conditions effect on GaN doping with carbon from propane and methane
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  134–141
3. Solid-phase substitution processes with phosphorus in InAs and InSb
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023),  20–22
4. Influence of source composition on the planar growth of nanowires during catalytic growth in a quasi-closed volume
   
   Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1082–1087
5. Transformation of N-polar inversion domains from AlN buffer layers during the growth of AlGaN layers
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  677–684
6. The effect of liquid Silicon on the AlN crystal growth
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  527
7. Obtaining anisotypic heterostructures for a GaSb-based photovoltaic converter due to solid-phase substitution reactions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:21 (2022),  3–5
8. Development and study of the $p$–$i$–$n$-диодов GaAs/AlGaAs tunnel diodes for multijunction converters of high-power laser radiation
   
   Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  285–291
9. Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  22–24
10. Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1512–1518
11. Quantum yield of a silicon XUV avalanche photodiode in the 320–1100 nm wavelength range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  10–13
12. Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  22–25
13. Characteristics of a silicon avalanche photodiode for the near-IR spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  40–42
14. Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  21–24
15. Change in the character of biaxial stresses with an increase in $x$ from 0 to 0.7 in Al$_{x}$Ga$_{1-x}$N:Si layers obtained by ammonia molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  233–237
16. Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  48–56
17. A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  17–24
18. The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  44–50
19. Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1696
20. Formation of a $p$-type emitter with the involvement of surfactants in GaAs photoelectric converters
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  699–703
21. A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  78–86
22. Electrochemical lithiation of silicon with varied crystallographic orientation
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  979–986
23. Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  57–63
24. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  85–91
25. On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in $p$-4H-SiC
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015),  61–67