Kazantsev Dmitrii Yur'evich

Publications in Math-Net.Ru

1. Водородные дефекты в алмазах: исследование и определение содержания N3VH с использованием масс-спектрометрии вторичных ионов и инфракрасной спектроскопии
   
   Optics and Spectroscopy, 133:6 (2025),  626–636
2. Photovoltaic laser power converter based on germanium
   
   Zhurnal Tekhnicheskoi Fiziki, 94:5 (2024),  801–807
3. Study of growth conditions effect on GaN doping with carbon from propane and methane
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  134–141
4. Solid-phase substitution processes with phosphorus in InAs and InSb
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023),  20–22
5. Influence of source composition on the planar growth of nanowires during catalytic growth in a quasi-closed volume
   
   Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1082–1087
6. Transformation of N-polar inversion domains from AlN buffer layers during the growth of AlGaN layers
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  677–684
7. The effect of liquid Silicon on the AlN crystal growth
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  527
8. Obtaining anisotypic heterostructures for a GaSb-based photovoltaic converter due to solid-phase substitution reactions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:21 (2022),  3–5
9. Development and study of the $p$–$i$–$n$-диодов GaAs/AlGaAs tunnel diodes for multijunction converters of high-power laser radiation
   
   Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  285–291
10. Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  22–24
11. Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1512–1518
12. Quantum yield of a silicon XUV avalanche photodiode in the 320–1100 nm wavelength range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  10–13
13. Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  22–25
14. Characteristics of a silicon avalanche photodiode for the near-IR spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  40–42
15. Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  21–24
16. Change in the character of biaxial stresses with an increase in $x$ from 0 to 0.7 in Al$_{x}$Ga$_{1-x}$N:Si layers obtained by ammonia molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  233–237
17. Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  48–56
18. A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  17–24
19. The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  44–50
20. Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1696
21. Formation of a $p$-type emitter with the involvement of surfactants in GaAs photoelectric converters
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  699–703
22. A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  78–86
23. Electrochemical lithiation of silicon with varied crystallographic orientation
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  979–986
24. Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  57–63
25. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  85–91
26. On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in $p$-4H-SiC
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015),  61–67
27. Decrease in the binding energy of donors in heavily doped GaN:Si layers
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1164–1168
28. Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  32–35
29. High-efficiency GaSb photocells
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  273–279
30. Photoresponse recovery in silicon photodiodes upon VUV irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  178–181