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Publications in Math-Net.Ru
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Conductivity of metal–dielectric–semiconductor structures based on ferroelectric films
Fizika Tverdogo Tela, 62:1 (2020), 121–124
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On the nature of the increase in the electron mobility in the inversion channel at the silicon–oxide interface after the field effect
Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 89–92
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The influence of the substrate material on the structure and electrophysical properties of Ba$_{x}$Sr$_{1-x}$TiO$_{3}$ thin films
Fizika Tverdogo Tela, 60:5 (2018), 951–954
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Phonon-Drag thermopower in a quantum wire with parabolic confinement potential for electrons
Izv. Sarat. Univ. Physics, 17:4 (2017), 263–268
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Calculation of thermal parameters and technology of formation MPL microwave range
Izv. Sarat. Univ. Physics, 13:1 (2013), 9–12
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Determining parameters of planar capacitors based of thin film ferroelectric materials
Izv. Sarat. Univ. Physics, 12:2 (2012), 8–11
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Influence of Sm impurity atoms on the switching effect in thin films of GeS
Izv. Sarat. Univ. Physics, 16:4 (2016), 212–217
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