Korolev Dmitrii Sergeevich

Publications in Math-Net.Ru

1. Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide
   
   Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020),  298–304
2. The effect of irradiation with Si$^{+}$ ions on the resistive switching of memristive structures based on yttria stabilized zirconia
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  3–6
3. Effect of boron impurity on the light-emitting properties of dislocation structures formed in silicon by Si$^{+}$ ion implantation
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  702–707
4. Simulation of synaptic coupling of neuron-like generators via a memristive device
   
   Zhurnal Tekhnicheskoi Fiziki, 87:8 (2017),  1248–1254
5. Formation of hexagonal 9$R$ silicon polytype by ion implantation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017),  87–92
6. Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO$_{x}$
   
   Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016),  107–111
7. Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
   
   Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  274–278
8. Resistive switching in Au/SiO$_{x}$/TiN/Ti memristive structures with varied geometric parameters and stoichiometry of dielectric film
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  17–24