Publications in Math-Net.Ru
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Atomic force microscopy examination of elementary processes in metalorganic compound hydride epitaxy of GaAs-based nanoheterostructures
Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020), 826–830
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Influence of the rotation frequency of a disk substrate holder on the crystal structure characteristics of MOCVD-grown GaAs layers
Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018), 219–223
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Models of heat-and-mass transfer processes at vapor-phase epitaxy of semiconductor layers
University proceedings. Volga region. Physical and mathematical sciences, 2017, no. 2, 91–107
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Convective diffusion from gas to a rotating disk
Prikl. Mekh. Tekh. Fiz., 57:4 (2016), 74–83
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Analysis of thickness unevenness of the epitaxial silicon layer during deposition from sublimation sources in a vacuum
University proceedings. Volga region. Physical and mathematical sciences, 2015, no. 4, 93–100
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