Mokrushina S A

Publications in Math-Net.Ru

1. Model of the effect of the gate bias on MOS structures under ionizing radiation
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  189–194
2. Model for charge accumulation in $n$- and $p$-MOS transistors during tunneling electron injection from a gate
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  637–642