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Shapoval Sergei Yur'evich
Publications in Math-Net.Ru
Investigation of the effect of atomic composition on the plasma-chemical etching rate of silicon nitride in high-power transistors based on an AlGaN/GaN heterojunction
Fizika i Tekhnika Poluprovodnikov
,
54
:8 (2020),
748–752
©
Steklov Math. Inst. of RAS
, 2024