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Shapoval Sergei Yur'evich

Publications in Math-Net.Ru

  1. Investigation of the effect of atomic composition on the plasma-chemical etching rate of silicon nitride in high-power transistors based on an AlGaN/GaN heterojunction

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  748–752


© Steklov Math. Inst. of RAS, 2024