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Grigoryeva N N
Publications in Math-Net.Ru
Compensation for the nonlinearity of the drain–gate I–V characteristic in field-effect transistors with a gate length of
$\sim$
100 nm
Fizika i Tekhnika Poluprovodnikov
,
54
:9 (2020),
968–973
©
Steklov Math. Inst. of RAS
, 2024