Pushkarev Sergei Sergeevich

Publications in Math-Net.Ru

1. THz emission from (100)- and (111)A-oriented multiple pseudomorphic quantum wells $\{\mathrm{InGaAs/InAlAs}\}$
   
   Optics and Spectroscopy, 133:3 (2025),  221–231
2. Analysis of TEM image of quantum cascade laser heterostructure grown by metalorganic vapour-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  179–184
3. Generation of THz radiation by (100), (110), and (111)A-oriented multiple pseudomorphic InGaAs/GaAs quantum wells and photoconductive antennas
   
   Kvantovaya Elektronika, 54:1 (2024),  43–50
4. Temperature degradation of 2.3, 3.2 and 4.1 THz quantum cascade lasers
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  705–710
5. 3.8 THz quantum cascade laser grown by metalorganic vapor phase epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:10 (2022),  16–19
6. Study of the surface morphology, electrophysical characteristics, and photoluminescence spectra of GaAs epitaxial films on GaAs (110) substrates
   
   Optics and Spectroscopy, 128:7 (2020),  877–884
7. Silicon-doped epitaxial films grown on GaAs(110) substrates: the surface morphology, electrical characteristics, and photoluminescence spectra
   
   Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1203–1210
8. Electrical and photoluminescence studies of $\{\mathrm{LT}-\mathrm{GaAs/GaAs} : \mathrm{Si}\}$ superlattices grown by MBE on (100)- and (111)A-oriented GaAs substrates
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  258–266
9. X-ray diffraction analysis of features of the crystal structure of GaN/Al$_{0.32}$Ga$_{0.68}$N HEMT-heterostructures by the Williamson–Hall method
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  586–590
10. Photoluminescence studies of Si-doped epitaxial GaAs films grown on (100)- and (111)A-oriented GaAs substrates at lowered temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  395–401
11. Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  792–797
12. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  529–534
13. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  322–330
14. Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the $\omega$-scanning mode
    
    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  567–573
15. Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  195–203