Pushkarev Sergei Sergeevich

Publications in Math-Net.Ru

1. THz emission from (100)- and (111)A-oriented multiple pseudomorphic quantum wells $\{\mathrm{InGaAs/InAlAs}\}$
   
   Optics and Spectroscopy, 133:3 (2025),  221–231
2. Temperature influence on the crystal structure of CdTe(111) films grown by molecular-beam epitaxy on GaAs(100) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  141–149
3. Analysis of TEM image of quantum cascade laser heterostructure grown by metalorganic vapour-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  179–184
4. Generation of THz radiation by (100), (110), and (111)A-oriented multiple pseudomorphic InGaAs/GaAs quantum wells and photoconductive antennas
   
   Kvantovaya Elektronika, 54:1 (2024),  43–50
5. Temperature degradation of 2.3, 3.2 and 4.1 THz quantum cascade lasers
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  705–710
6. 3.8 THz quantum cascade laser grown by metalorganic vapor phase epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:10 (2022),  16–19
7. Study of the surface morphology, electrophysical characteristics, and photoluminescence spectra of GaAs epitaxial films on GaAs (110) substrates
   
   Optics and Spectroscopy, 128:7 (2020),  877–884
8. Silicon-doped epitaxial films grown on GaAs(110) substrates: the surface morphology, electrical characteristics, and photoluminescence spectra
   
   Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1203–1210
9. Electrical and photoluminescence studies of $\{\mathrm{LT}-\mathrm{GaAs/GaAs} : \mathrm{Si}\}$ superlattices grown by MBE on (100)- and (111)A-oriented GaAs substrates
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  258–266
10. X-ray diffraction analysis of features of the crystal structure of GaN/Al$_{0.32}$Ga$_{0.68}$N HEMT-heterostructures by the Williamson–Hall method
    
    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  586–590
11. Photoluminescence studies of Si-doped epitaxial GaAs films grown on (100)- and (111)A-oriented GaAs substrates at lowered temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  395–401
12. Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  792–797
13. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  529–534
14. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  322–330
15. Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the $\omega$-scanning mode
    
    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  567–573
16. Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  195–203
17. Photoluminescence properties of modulation-doped In$_x$Al$_{1-x}$As/In$_y$Ga$_{1-y}$As/In$_x$Al$_{1-x}$As structures with strained inas and gaas nanoinserts in the quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1243–1253
18. Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In$_{0.70}$Al$_{0.30}$As/In$_{0.76}$Ga$_{0.24}$As/In$_{0.70}$Al$_{0.30}$As structures on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  942–950
19. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  241–248
20. Application of photoluminescence spectroscopy to studies of In$_{0.38}$Al$_{0.62}$As/In$_{0.38}$Ga$_{0.62}$As/In$_{0.38}$Al$_{0.62}$As metamorphic nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:7 (2014),  909–916
21. Photoluminescence studies of In$_{0.7}$Al$_{0.3}$As/In$_{0.75}$Ga$_{0.25}$As/In$_{0.7}$Al$_{0.3}$As metamorphic heterostructures on GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 48:5 (2014),  658–666
22. Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic In$_{0.7}$Al$_{0.3}$As/In$_{0.75}$Ga$_{0.25}$As/In$_{0.7}$Al$_{0.3}$As HEMT nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  67–72
23. Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations
    
    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  990–996
24. Study of the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and the atomic structure of InAlAs/InGaAs MHEMT heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 47:4 (2013),  510–515
25. Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  348–352