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Publications in Math-Net.Ru
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Study of the surface morphology, electrophysical characteristics, and photoluminescence spectra of GaAs epitaxial films on GaAs (110) substrates
Optics and Spectroscopy, 128:7 (2020), 877–884
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Silicon-doped epitaxial films grown on GaAs(110) substrates: the surface morphology, electrical characteristics, and photoluminescence spectra
Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1203–1210
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Electrical and photoluminescence studies of $\{\mathrm{LT}-\mathrm{GaAs/GaAs} : \mathrm{Si}\}$ superlattices grown by MBE on (100)- and (111)A-oriented GaAs substrates
Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 258–266
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X-ray diffraction analysis of features of the crystal structure of GaN/Al$_{0.32}$Ga$_{0.68}$N HEMT-heterostructures by the Williamson–Hall method
Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 586–590
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Photoluminescence studies of Si-doped epitaxial GaAs films grown on (100)- and (111)A-oriented GaAs substrates at lowered temperatures
Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 395–401
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Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates
Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 792–797
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Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 529–534
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Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates
Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 322–330
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Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the $\omega$-scanning mode
Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 567–573
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Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 195–203
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