Tregulov Vadim Viktorovich

Publications in Math-Net.Ru

1. Current transmission mechanisms in the semiconductor structure of a photoelectric transducer with an $n^{+}$–$p$ junction and an antireflection porous silicon film formed by color etching
   
   Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019),  737–743
2. Deep-level defects in a photovoltaic converter with an antireflection porous silicon film formed by chemical stain etching
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  24–27
3. Features of the frequency dependence of capacitance–voltage characteristics of a semiconductor structure of a photoelectric converter based on a $p$–$n$ junction with an antireflective film of porous silicon
   
   Zhurnal Tekhnicheskoi Fiziki, 88:12 (2018),  1863–1867
4. Study of current flow mechanisms in a CdS/$por$-Si/$p$-Si heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  751–756
5. Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:21 (2017),  3–9
6. Specific features of current flow mechanisms in the semiconductor structure of a photoelectric converter with an $n^{+}$–$p$-junction and an antireflective porous silicon film
   
   Zhurnal Tekhnicheskoi Fiziki, 86:11 (2016),  91–94
7. An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016),  16–22
8. A method for determining the density of surface states in CdA/Si(p) heterostructures based on the analysis of volt-farad characteristics
   
   University proceedings. Volga region. Physical and mathematical sciences, 2012, no. 3,  124–132
9. Study of surface states in photoelectric solar energy converters based on a CdS/Si(p) heterostructure
   
   University proceedings. Volga region. Physical and mathematical sciences, 2011, no. 3,  140–150