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Ganin Yurii Valentinovich
Publications in Math-Net.Ru
The effect of the doping level of starting silicon single crystals on structural parameters of porous silicon produced by electrochemical etching
Pisma v Zhurnal Tekhnicheskoi Fiziki
,
45
:21 (2019),
3–6
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Steklov Math. Inst. of RAS
, 2024