Fefelova E L

Publications in Math-Net.Ru

1. InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  29–33
2. Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors
   
   Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1484–1488