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Akhmedov F A
Publications in Math-Net.Ru
InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics
Pisma v Zhurnal Tekhnicheskoi Fiziki
,
45
:21 (2019),
29–33
©
Steklov Math. Inst. of RAS
, 2024
