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Publications in Math-Net.Ru
Comparison of the radiation resistance of prospective bipolar and heterobipolar transistors
Fizika i Tekhnika Poluprovodnikov
,
53
:10 (2019),
1391–1394
InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics
Pisma v Zhurnal Tekhnicheskoi Fiziki
,
45
:21 (2019),
29–33
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