Pavlov Aleksandr Yur'evich

Publications in Math-Net.Ru

1. Plasmonic photoconductive antennas for terahertz pulsed spectroscopy and imaging systems
   
   Optics and Spectroscopy, 126:5 (2019),  663–669
2. Low-energy defectless dry etching of the AlGaN/AlN/GaN HEMT barrier layer
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018),  61–67
3. Electrical and thermal properties of photoconductive antennas based on In$_{x}$Ga$_{1-x}$As ($x>$ 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1267–1272
4. Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  461–466
5. The thermal stability of nonalloyed ohmic contacts to AlGaN/GaN heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017),  96–103
6. The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN НЕМТ channel
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017),  9–14
7. Terahertz radiation generation in multilayer quantum-cascade heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017),  86–94
8. Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si$_{3}$N$_{4}$ passivation
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1434–1438
9. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1395–1400
10. On a two-layer Si$_{3}$N$_{4}$/SiO$_{2}$ dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs
    
    Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1138–1142