Vexler Mikhail Isaakovich

Publications in Math-Net.Ru

1. Trends in reverse-current change in tunnel MIS diodes with calcium fluoride on Si(111) upon the formation of an extra oxide layer
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  844–849
2. Impact of the device geometric parameters on hot-carrier degradation in FinFETs
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1631–1635
3. Analysis of the features of hot-carrier degradation in FinFETs
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1177–1182
4. Simulating tunneling electron transport in the semiconductor–crystalline insulator–Si(111) system
   
   Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  900–905
5. Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  254–259
6. Nonmonotonic change in the tunnel conductivity of an MIS structure with a two-layer insulator with an increase in its thickness (by the example of the metal/SiO$_{2}$/CaF$_{2}$/Si system)
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  150–157
7. Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling
   
   Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  467–471
8. Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-$K$-oxide/SiO$_{2}$/Si structure
   
   Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  683–688
9. Resonant electron tunneling and related charging phenomena in metal–oxide–$p^+$-Si nanostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  62–69