Vexler Mikhail Isaakovich

Publications in Math-Net.Ru

1. The influence of external parameters on the switching process by delayed ionization in a silicon $p^+$–$n$–$n^+$-structure
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  326–332
2. Reproducibility of the electrophysical characteristics of the prototype transistor structures based on the graphene–CaF$_2$–Si(111) heterosystem
   
   Fizika i Tekhnika Poluprovodnikov, 58:5 (2024),  272–277
3. Field-effect transistor with graphene channel and epitaxial calcium fluoride layer as a gate dielectric
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:4 (2024),  27–30
4. Calcium fluoride films with 2–10 nm thickness on Silicon-(111): growth, diagnostics, study of the through current transport
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  888–892
5. Trends in reverse-current change in tunnel MIS diodes with calcium fluoride on Si(111) upon the formation of an extra oxide layer
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  844–849
6. Impact of the device geometric parameters on hot-carrier degradation in FinFETs
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1631–1635
7. Analysis of the features of hot-carrier degradation in FinFETs
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1177–1182
8. Simulating tunneling electron transport in the semiconductor–crystalline insulator–Si(111) system
   
   Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  900–905
9. Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  254–259
10. Nonmonotonic change in the tunnel conductivity of an MIS structure with a two-layer insulator with an increase in its thickness (by the example of the metal/SiO$_{2}$/CaF$_{2}$/Si system)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  150–157
11. Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  467–471
12. Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-$K$-oxide/SiO$_{2}$/Si structure
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  683–688
13. Resonant electron tunneling and related charging phenomena in metal–oxide–$p^+$-Si nanostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  62–69
14. Increasing the efficiency of a silicon tunnel MIS injector of hot electrons by using high-K oxides
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:17 (2015),  103–110