RUS  ENG
Full version
PEOPLE

Fedin Ivan Vladimirovich

Publications in Math-Net.Ru

  1. Low-temperature Ta/Al-based ohmic contacts to AlGaN/GaN heteroepitaxial structures on silicon wafers

    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  249–252
  2. High-voltage MIS-gated GaN transistors

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1278–1281
  3. Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  253–257
  4. Formation of the low-resistivity compound Cu$_{3}$Ge by low-temperature treatment in an atomic hydrogen flux

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1258–1262


© Steklov Math. Inst. of RAS, 2024