Kudriavtsev Yurii Alekseevich

Publications in Math-Net.Ru

1. Preparation, structural features, elemental composition of and dielectric properties of a two-layer structure based on thin films of multiferroic BiFeO$_3$ and ferroelectric (Sr, Ba)Nb$_2$O$_6$
   
   Fizika Tverdogo Tela, 64:12 (2022),  1954–1959
2. Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1512–1518
3. Effects of magnetic ordering in conductivity and magnetization of gaas-based semiconductor heterostructures upon changing the concentration of the delta-layer of manganese admixture
   
   Fizika Tverdogo Tela, 60:12 (2018),  2325–2330
4. On the delta-type doping of GaAs-based heterostructures with manganese compounds
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1189–1195
5. Negative annealing in silicon after the implantation of high-energy sodium ions
   
   Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  579–584
6. Interaction of water vapor with silicate glass surfaces: Mass-spectrometric investigations
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:9 (2017),  75–82
7. Features of an InAsSbP epilayer formation on an InAs support by metalorganic vapor phase epitaxy
   
   Fizika Tverdogo Tela, 58:11 (2016),  2203–2207
8. Charge transfer features and ferromagnetic order in semiconductor heterostructures $\delta$-doped with manganese
   
   Fizika Tverdogo Tela, 58:11 (2016),  2160–2163