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Jech M
Publications in Math-Net.Ru
Impact of the device geometric parameters on hot-carrier degradation in FinFETs
Fizika i Tekhnika Poluprovodnikov
,
52
:13 (2018),
1631–1635
Analysis of the features of hot-carrier degradation in FinFETs
Fizika i Tekhnika Poluprovodnikov
,
52
:10 (2018),
1177–1182
Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures
Fizika i Tekhnika Poluprovodnikov
,
52
:2 (2018),
254–259
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Steklov Math. Inst. of RAS
, 2024