Stepanov Boris Sergeevich

Publications in Math-Net.Ru

1. Electrophysical properties of $p$-type undoped and arsenic-doped Hg$_{1-x}$Cd$_{x}$Te epitaxial layers with $x\approx$ 0.4 grown by the MOCVD method
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  554–559