Lavrukhin Denis Vladimirovich

Publications in Math-Net.Ru

1. Efficient THz emission by a photoconductive emitter with tight photocarrier confinement within high-aspect ratio plasmonic electrodes
   
   Optics and Spectroscopy, 132:1 (2024),  105–110
2. Significant noise current decrease in a terahertz photoconductive antenna-detector based on a strain-induced InAlAs/InGaAs superlattice
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:8 (2024),  12–14
3. Generation of THz radiation by (100), (110), and (111)A-oriented multiple pseudomorphic InGaAs/GaAs quantum wells and photoconductive antennas
   
   Kvantovaya Elektronika, 54:1 (2024),  43–50
4. Optical-to-terahertz switches: state of the art and new opportunities for multispectral imaging
   
   UFN, 194:1 (2024),  2–22
5. Laser pulse energy localization in a photoconductive THz emitter via sapphire fibers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:23 (2022),  11–13
6. Photoconductive THz detector based on new functional layers in multi-layer heterostructures
   
   Optics and Spectroscopy, 129:6 (2021),  741–746
7. Emission efficiency of terahertz antennas with conventional topology and metal metasurface: a comparative analysis
   
   Optics and Spectroscopy, 128:7 (2020),  1012–1019
8. Plasmonic photoconductive antennas for terahertz pulsed spectroscopy and imaging systems
   
   Optics and Spectroscopy, 126:5 (2019),  663–669
9. Terahertz microscope based on solid immersion effect for imaging of biological tissues
   
   Optics and Spectroscopy, 126:5 (2019),  642–649
10. Electrical and thermal properties of photoconductive antennas based on In$_{x}$Ga$_{1-x}$As ($x>$ 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1267–1272
11. Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the $\omega$-scanning mode
    
    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  567–573
12. Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  195–203
13. Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  185–190