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Publications in Math-Net.Ru
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Повышение эффективности лазерного возбуждения оптоэлектронного терагерцевого источника при помощи массива ближнепольных сапфировых микролинз
Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:19 (2025), 46–48
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Efficient THz emission by a photoconductive emitter with tight photocarrier confinement within high-aspect ratio plasmonic electrodes
Optics and Spectroscopy, 132:1 (2024), 105–110
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Significant noise current decrease in a terahertz photoconductive antenna-detector based on a strain-induced InAlAs/InGaAs superlattice
Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:8 (2024), 12–14
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Generation of THz radiation by (100), (110), and (111)A-oriented multiple pseudomorphic InGaAs/GaAs quantum wells and photoconductive antennas
Kvantovaya Elektronika, 54:1 (2024), 43–50
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Optical-to-terahertz switches: state of the art and new opportunities for multispectral imaging
UFN, 194:1 (2024), 2–22
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Laser pulse energy localization in a photoconductive THz emitter via sapphire fibers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:23 (2022), 11–13
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Photoconductive THz detector based on new functional layers in multi-layer heterostructures
Optics and Spectroscopy, 129:6 (2021), 741–746
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Emission efficiency of terahertz antennas with conventional topology and metal metasurface: a comparative analysis
Optics and Spectroscopy, 128:7 (2020), 1012–1019
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Plasmonic photoconductive antennas for terahertz pulsed spectroscopy and imaging systems
Optics and Spectroscopy, 126:5 (2019), 663–669
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Terahertz microscope based on solid immersion effect for imaging of biological tissues
Optics and Spectroscopy, 126:5 (2019), 642–649
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Electrical and thermal properties of photoconductive antennas based on In$_{x}$Ga$_{1-x}$As ($x>$ 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1267–1272
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Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the $\omega$-scanning mode
Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 567–573
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Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 195–203
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Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 185–190
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Photoluminescence of heterostructures containing an In$_x$Ga$_{1-x}$As quantum well with a high in content at different excitation powers
Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1254–1257
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Photoluminescence properties of modulation-doped In$_x$Al$_{1-x}$As/In$_y$Ga$_{1-y}$As/In$_x$Al$_{1-x}$As structures with strained inas and gaas nanoinserts in the quantum well
Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1243–1253
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Investigation of the optical properties of GaAs with $\delta$-Si doping grown by molecular-beam epitaxy at low temperatures
Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 932–935
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Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well
Fizika i Tekhnika Poluprovodnikov, 49:2 (2015), 241–248
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Application of photoluminescence spectroscopy to studies of In$_{0.38}$Al$_{0.62}$As/In$_{0.38}$Ga$_{0.62}$As/In$_{0.38}$Al$_{0.62}$As metamorphic nanoheterostructures
Fizika i Tekhnika Poluprovodnikov, 48:7 (2014), 909–916
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Photoluminescence studies of In$_{0.7}$Al$_{0.3}$As/In$_{0.75}$Ga$_{0.25}$As/In$_{0.7}$Al$_{0.3}$As metamorphic heterostructures on GaAs substrates
Fizika i Tekhnika Poluprovodnikov, 48:5 (2014), 658–666
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MHEMT with a power-gain cut-off frequency of $f_{\mathrm{max}}$ = 0.63 THz on the basis of a In$_{0.42}$Al$_{0.58}$As/In$_{0.42}$Ga$_{0.58}$As/In$_{0.42}$Al$_{0.58}$As/GaAs nanoheterostructure
Fizika i Tekhnika Poluprovodnikov, 48:1 (2014), 73–76
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