Publications in Math-Net.Ru
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Study of the structural and morphological properties of HPHT diamond substrates
Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1321–1325
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Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy
Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1538–1542
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Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”
Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1151
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Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1595–1598
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Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source
Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1459–1462
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