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Ivin S V
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Effect of atomic silicon and germanium beams on the growth kinetics of Si
$_{1-x}$
Ge
$_{x}$
layers in Si–GeH
$_{4}$
molecular beam epitaxy
Zhurnal Tekhnicheskoi Fiziki
,
87
:3 (2017),
427–437
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Steklov Math. Inst. of RAS
, 2024