V’yuginov Vladimir Nikolaevich

Publications in Math-Net.Ru

1. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
   
   Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  245–249
2. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
3. The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016),  80–86