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Krayovskyy V Ya
Publications in Math-Net.Ru
Features of the band structure and conduction mechanisms of
$n$
-HfNiSn heavily doped with Y
Fizika i Tekhnika Poluprovodnikov
,
51
:2 (2017),
147–153
Features of conductivity mechanisms in heavily doped compensated V
$_{1-x}$
Ti
$_{x}$
FeSb semiconductor
Fizika i Tekhnika Poluprovodnikov
,
50
:7 (2016),
877–885
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Steklov Math. Inst. of RAS
, 2024