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Urazbekov Artur

Publications in Math-Net.Ru

  1. A new way to increase the $R_{off}/R_{on}$ memristor parameter on the example of titanium oxide thin-film structure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:12 (2025),  43–45
  2. Formation and study of memristor elements based on copper and titanium oxides using magnetron technology

    Meždunar. nauč.-issled. žurn., 2023, no. 12(138),  1–7


© Steklov Math. Inst. of RAS, 2025