Novikov Alexandr Petrovich

Publications in Math-Net.Ru

1. О механизме ионно-индуцированной кристаллизации в кремнии
   
   Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1841–1844
2. Высокотемпературная ионная имплантация мышьяка в кремний
   
   Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  1132–1133
3. FORMATION OF BETA-SI3N4 HIDDEN LAYER UNDER HIGHLY EFFICIENT ION IRRADIATION (HII) OF SILICONE
   
   Zhurnal Tekhnicheskoi Fiziki, 59:1 (1989),  200–202
4. FORMATION OF TWINS AND HEXAGONAL MODIFICATION IN SILICON UNDER THE RADIATION WITH INTENSIVE AR+ ION-BEAMS
   
   Zhurnal Tekhnicheskoi Fiziki, 58:3 (1988),  548–551
5. Residual Defects in Silicon under Implantation of As$^{+}$ Ions in the Self-Annealing Mode
   
   Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1863–1867
6. Study of the Formation of $\beta$-SiC Monocrystalline Layers on Si by the Method of Highly Intense Ionic Doping
   
   Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  920–922
7. Annealing of Defects and Electric Activation of Impurity in the Process of Highly Intensive Ionic Doping of Silicon
   
   Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1726–1728
8. Synthesis of Monocrystalline Silicon Carbide by Single-Step Equipment of Highly Intense Ion Doping
   
   Fizika i Tekhnika Poluprovodnikov, 20:1 (1986),  149–152
9. Crystallization and the effect of the annealing macrodefects during the process of high dense ionic implantation of semiconducting crystals
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:18 (1985),  1110–1113