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Rozhavskaya Mariya Mikhailovna

Publications in Math-Net.Ru

  1. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN

    Fizika Tverdogo Tela, 57:9 (2015),  1850–1858


© Steklov Math. Inst. of RAS, 2025