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Rozhavskaya Mariya Mikhailovna
Publications in Math-Net.Ru
Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of
V
-defects during the growth of GaN
Fizika Tverdogo Tela
,
57
:9 (2015),
1850–1858
©
Steklov Math. Inst. of RAS
, 2025