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Thibeault Brian J
Publications in Math-Net.Ru
Electrical properties of MOS capacitors formed by PEALD grown Al
$_2$
O
$_3$
on silicon
Fizika i Tekhnika Poluprovodnikov
,
48
:4 (2014),
514–517
©
Steklov Math. Inst. of RAS
, 2025
