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Features of conduction mechanisms in
$n$
-HfNiSn semiconductor heavily doped with a Rh acceptor impurity
Fizika i Tekhnika Poluprovodnikov
,
47
:9 (2013),
1157–1164
Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor
$n$
-ZrNiSn
Fizika i Tekhnika Poluprovodnikov
,
47
:7 (2013),
882–889
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, 2025