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Publications in Math-Net.Ru

  1. Features of conduction mechanisms in $n$-HfNiSn semiconductor heavily doped with a Rh acceptor impurity

    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1157–1164
  2. Effect of the accumulation of excess Ni atoms in the crystal structure of the intermetallic semiconductor $n$-ZrNiSn

    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  882–889


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