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Mosbahi Hana
Publications in Math-Net.Ru
Effect of surface passivation by SiN/SiO
$_2$
of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method
Fizika i Tekhnika Poluprovodnikov
,
47
:7 (2013),
1002–1005
©
Steklov Math. Inst. of RAS
, 2025
