Dorozhkin S I

Publications in Math-Net.Ru

1. Isotopically modified silicon carbide: a semiconductor platform for quantum technologies
   
   Fizika Tverdogo Tela, 67:1 (2025),  114–120
2. Mechanisms of defect formation in ingots of 4H silicon carbide polytype
   
   Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  289–294