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Publications in Math-Net.Ru
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Pulsed laser irradiation of light-emitting structures with a (Ga,Mn)As layer
Fizika Tverdogo Tela, 63:9 (2021), 1245–1252
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Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type
Fizika Tverdogo Tela, 63:7 (2021), 866–873
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Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer
Fizika Tverdogo Tela, 63:3 (2021), 346–355
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Effect of ion irradiation on the magnetic properties of CoPt films
Fizika Tverdogo Tela, 63:3 (2021), 324–332
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Doping of carbon layers grown by the pulsed laser technique
Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 637–643
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Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 38–41
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Diode heterostructures with a ferromagnetic (Ga, Mn)As layer
Fizika Tverdogo Tela, 62:3 (2020), 373–380
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The use of films of multilayer graphene as coatings of light-emitting GaAs structures
Optics and Spectroscopy, 128:3 (2020), 399–406
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Pulsed laser irradiation of GaAs-based light-emitting structures
Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1336–1343
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Time-resolved photoluminescence in heterostructures with InGaAs:Cr/GaAs quantum wells
Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1139–1144
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Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures
Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 868–872
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Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy
Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 801–806
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Circularly polarized electroluminescence of spin LEDs with a ferromagnetic (In,Fe)Sb injector
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:14 (2020), 17–20
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Modifying the magnetic properties of the CoPt alloy by ion irradiation
Fizika Tverdogo Tela, 61:9 (2019), 1694–1699
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Phase separation in (Ga,Mn)As layers obtained by ion implantation and subsequent laser annealing
Fizika Tverdogo Tela, 61:3 (2019), 465–471
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Studying magnetic diodes with a GaMnAs layer formed by pulsed laser deposition
Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 351–358
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Diode structures based on (In, Fe)Sb/GaAs magnetic heterojunctions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019), 33–36
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Raising the operating temperature of (Ga,Mn)As/GaAs spin light emitting diodes by applying post-growth treatment
Fizika Tverdogo Tela, 60:11 (2018), 2141–2146
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The study of features of formation and properties of À$^{3}$Â$^{5}$ semiconductors highly doped with iron
Fizika Tverdogo Tela, 60:11 (2018), 2137–2140
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Phase separation in GaMnAs layers grown by laser pulsed deposition
Fizika Tverdogo Tela, 60:5 (2018), 940–946
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The effect of the composition of a carrier gas during the growth of a Mn delta-layer on the electrical and magnetic properties of GaAs structures
Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1286–1290
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Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions
Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 873–880
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Single-phase epitaxial InFeSb layers with a Curie temperature above room temperature
Fizika Tverdogo Tela, 59:11 (2017), 2200–2202
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Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer
Fizika Tverdogo Tela, 59:11 (2017), 2196–2199
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Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/$\delta$ $\langle$Mn$\rangle$ heterostructures
Fizika Tverdogo Tela, 59:11 (2017), 2142–2147
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Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing
Fizika Tverdogo Tela, 59:11 (2017), 2130–2134
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Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence
Zhurnal Tekhnicheskoi Fiziki, 87:10 (2017), 1539–1544
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Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties
Zhurnal Tekhnicheskoi Fiziki, 87:9 (2017), 1389–1394
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Features of the selective manganese doping of GaAs structures
Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1468–1472
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Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing
Fizika Tverdogo Tela, 58:11 (2016), 2140–2144
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Study of the structures of cleaved cross sections by Raman spectroscopy
Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1561–1564
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Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer $\delta$-doped with Mn
Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1490–1496
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Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications
Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1463–1468
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GaAs structures with a gate dielectric based on aluminum-oxide layers
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 204–207
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Nonlinear room-temperature Hall effect in $n$-InFeAs layers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016), 63–71
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Beatings of Shubnikov-de Haas oscillations in a two-dimensional hole system in an InGaAs quantum well
Pis'ma v Zh. Èksper. Teoret. Fiz., 91:6 (2010), 312–317
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Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well
Pis'ma v Zh. Èksper. Teoret. Fiz., 90:10 (2009), 730–735
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Magnetic properties of $\mathrm{GaAs}/\delta\langle\mathrm{Mn}\rangle/\mathrm{GaAs}/\mathrm{In}_x\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs}$ quantum wells
Pis'ma v Zh. Èksper. Teoret. Fiz., 87:3 (2008), 192–198
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Anomalous hall effect in Mn $\delta$-doped GaAs/In$_{0.17}$Ga$_{0.83}$As/GaAs quantum wells with high hole mobility
Pis'ma v Zh. Èksper. Teoret. Fiz., 85:1 (2007), 32–39
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Ferromagnetism in epitaxial germanium and silicon layers supersaturated with managanese and iron impurities
Pis'ma v Zh. Èksper. Teoret. Fiz., 83:12 (2006), 664–667
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Characteristic X-Ray Radiation Study
of Disturbances in Low-Lying Levels
in InSb Implanted Single Crystals
Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 189–191
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Morphological and structural changes of $\mathrm{InSb}$ at ion bombardment
Dokl. Akad. Nauk SSSR, 248:5 (1979), 1111–1114
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