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Danilov Yurii Aleksandrovich

Publications in Math-Net.Ru

  1. Formation of ferromagnetic semiconductor GaMnAs by ion implantation: comparison of different types of annealing

    Fizika Tverdogo Tela, 66:10 (2024),  1686–1698
  2. Galvanomagnetic properties of GaMnAs layers obtained by ion implantation: the role of Mn$^+$ ion energy

    Fizika Tverdogo Tela, 66:6 (2024),  871–876
  3. Ferromagnetic GaMnAs layers obtained by implantation of manganese ions followed by pulsed laser annealing

    Fizika Tverdogo Tela, 65:12 (2023),  2230–2238
  4. Creation of GaMnAs ferromagnetic semiconductor by combined laser method

    Fizika Tverdogo Tela, 65:5 (2023),  754–761
  5. Formation of vertical graphene on surface of the gallium-arsenide structures

    Fizika Tverdogo Tela, 65:4 (2023),  669–675
  6. Fabrication and study of the properties of GaAs layers doped with bismuth

    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  399–405
  7. Effect of growth temperature on the physicochemical properties of low-temperature GaAs layers fabricated by pulsed laser deposition

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:4 (2023),  11–14
  8. Formation of skyrmion states in ion-irradiated CoPt thin films

    Fizika Tverdogo Tela, 64:9 (2022),  1304–1310
  9. Pulsed laser irradiation of light-emitting structures with a (Ga,Mn)As layer

    Fizika Tverdogo Tela, 63:9 (2021),  1245–1252
  10. Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type

    Fizika Tverdogo Tela, 63:7 (2021),  866–873
  11. Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer

    Fizika Tverdogo Tela, 63:3 (2021),  346–355
  12. Effect of ion irradiation on the magnetic properties of CoPt films

    Fizika Tverdogo Tela, 63:3 (2021),  324–332
  13. Doping of carbon layers grown by the pulsed laser technique

    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  637–643
  14. Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  38–41
  15. Diode heterostructures with a ferromagnetic (Ga, Mn)As layer

    Fizika Tverdogo Tela, 62:3 (2020),  373–380
  16. The use of films of multilayer graphene as coatings of light-emitting GaAs structures

    Optics and Spectroscopy, 128:3 (2020),  399–406
  17. Pulsed laser irradiation of GaAs-based light-emitting structures

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1336–1343
  18. Time-resolved photoluminescence in heterostructures with InGaAs:Cr/GaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1139–1144
  19. Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  868–872
  20. Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  801–806
  21. Circularly polarized electroluminescence of spin LEDs with a ferromagnetic (In,Fe)Sb injector

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:14 (2020),  17–20
  22. Modifying the magnetic properties of the CoPt alloy by ion irradiation

    Fizika Tverdogo Tela, 61:9 (2019),  1694–1699
  23. Phase separation in (Ga,Mn)As layers obtained by ion implantation and subsequent laser annealing

    Fizika Tverdogo Tela, 61:3 (2019),  465–471
  24. Studying magnetic diodes with a GaMnAs layer formed by pulsed laser deposition

    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  351–358
  25. Diode structures based on (In, Fe)Sb/GaAs magnetic heterojunctions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019),  33–36
  26. Raising the operating temperature of (Ga,Mn)As/GaAs spin light emitting diodes by applying post-growth treatment

    Fizika Tverdogo Tela, 60:11 (2018),  2141–2146
  27. The study of features of formation and properties of À$^{3}$Â$^{5}$ semiconductors highly doped with iron

    Fizika Tverdogo Tela, 60:11 (2018),  2137–2140
  28. Phase separation in GaMnAs layers grown by laser pulsed deposition

    Fizika Tverdogo Tela, 60:5 (2018),  940–946
  29. The effect of the composition of a carrier gas during the growth of a Mn delta-layer on the electrical and magnetic properties of GaAs structures

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1286–1290
  30. Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions

    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  873–880
  31. Single-phase epitaxial InFeSb layers with a Curie temperature above room temperature

    Fizika Tverdogo Tela, 59:11 (2017),  2200–2202
  32. Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer

    Fizika Tverdogo Tela, 59:11 (2017),  2196–2199
  33. Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/$\delta$ $\langle$Mn$\rangle$ heterostructures

    Fizika Tverdogo Tela, 59:11 (2017),  2142–2147
  34. Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing

    Fizika Tverdogo Tela, 59:11 (2017),  2130–2134
  35. Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence

    Zhurnal Tekhnicheskoi Fiziki, 87:10 (2017),  1539–1544
  36. Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties

    Zhurnal Tekhnicheskoi Fiziki, 87:9 (2017),  1389–1394
  37. Features of the selective manganese doping of GaAs structures

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1468–1472
  38. Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing

    Fizika Tverdogo Tela, 58:11 (2016),  2140–2144
  39. Study of the structures of cleaved cross sections by Raman spectroscopy

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1561–1564
  40. Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer $\delta$-doped with Mn

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1490–1496
  41. Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1463–1468
  42. GaAs structures with a gate dielectric based on aluminum-oxide layers

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  204–207
  43. Nonlinear room-temperature Hall effect in $n$-InFeAs layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016),  63–71
  44. Beatings of Shubnikov-de Haas oscillations in a two-dimensional hole system in an InGaAs quantum well

    Pis'ma v Zh. Èksper. Teoret. Fiz., 91:6 (2010),  312–317
  45. Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well

    Pis'ma v Zh. Èksper. Teoret. Fiz., 90:10 (2009),  730–735
  46. Magnetic properties of $\mathrm{GaAs}/\delta\langle\mathrm{Mn}\rangle/\mathrm{GaAs}/\mathrm{In}_x\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs}$ quantum wells

    Pis'ma v Zh. Èksper. Teoret. Fiz., 87:3 (2008),  192–198
  47. Anomalous hall effect in Mn $\delta$-doped GaAs/In$_{0.17}$Ga$_{0.83}$As/GaAs quantum wells with high hole mobility

    Pis'ma v Zh. Èksper. Teoret. Fiz., 85:1 (2007),  32–39
  48. Ferromagnetism in epitaxial germanium and silicon layers supersaturated with managanese and iron impurities

    Pis'ma v Zh. Èksper. Teoret. Fiz., 83:12 (2006),  664–667
  49. Characteristic X-Ray Radiation Study of Disturbances in Low-Lying Levels in InSb Implanted Single Crystals

    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  189–191
  50. Morphological and structural changes of $\mathrm{InSb}$ at ion bombardment

    Dokl. Akad. Nauk SSSR, 248:5 (1979),  1111–1114

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