Burenkov A F

Publications in Math-Net.Ru

1. FLUCTUATIONS OF ION CHARGE STATES - POSSIBLE REASON FOR INCREASE OF SHOOT DISPERSION UNDER HIGH-ENERGY IONIC IMPLANTATION
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:5 (1991),  69–72
2. Numerical simulation submicron doped regions in semiconductor structures manufacturing
   
   Matem. Mod., 2:10 (1990),  13–25
3. MODEL OF BORON ION CHANNELING UNDER THE HIGH-ENERGY ION ALLOYING OF SILICON-CRYSTALS
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:23 (1990),  4–8
4. HIGH-ENERGY ION-IMPLANTATION
   
   Zhurnal Tekhnicheskoi Fiziki, 58:3 (1988),  559–566
5. RADIATION UNDER CHANNELING ELECTRONS WITH 16.9, 30.5, 54.5-MU-U ENERGY IN DIAMOND
   
   Zhurnal Tekhnicheskoi Fiziki, 58:1 (1988),  195–197
6. EFFECTS ACCOMPANYING THE CHANNELING OF ULTRARELATIVISTIC ELECTRONS IN CRYSTALS
   
   Zhurnal Tekhnicheskoi Fiziki, 56:11 (1986),  2214–2220
7. BROADENING THE SPONTANEOUS RADIATION LINES DURING ELECTRON PLANAR CHANNELING
   
   Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2184–2190