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Zabrodskii Andrei Georgievich

Publications in Math-Net.Ru

  1. Detection of the ferromagnetic properties of Si:P in the region of an insulator–metal phase transition

    Pis'ma v Zh. Èksper. Teoret. Fiz., 115:11 (2022),  730–735
  2. Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of $p$-Ge:Ga)

    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  738–750
  3. A quasi-classical model of the Hubbard gap in lightly compensated semiconductors

    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  302–312
  4. Scientists' contribution to the Great Victory in WWII on the example of the Leningrad (now A F Ioffe) Physical Technical Institute

    UFN, 183:5 (2013),  518–528
  5. Portable fuel cells: their physics and micro- and nanotechnologies

    UFN, 176:4 (2006),  444–449
  6. Coulomb gap and metal–insulator transitions in doped semiconductors

    UFN, 168:7 (1998),  804–808
  7. Прыжковая проводимость ${K=0.3}$-серии образцов Ge : Ga : эффект насыщения, перскоки по ближайшим соседям и переход к прыжкам с переменной длиной

    Fizika i Tekhnika Poluprovodnikov, 26:3 (1992),  431–446
  8. On the nature of microwave absorption in the superconducting ceramic $\mathrm{YBa}_{2}\mathrm{Cu}_{3}\mathrm{O}_{7}$ in weak magnetic fields

    Fizika Tverdogo Tela, 31:1 (1989),  294–297
  9. ANOMALOUS UHF ABSORPTION IN MAGNETIC-FILLED LOW-MOLECULAR RESINS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:21 (1989),  59–61
  10. Эксперименальное определение холл-фактора в сложной валентной зоне $p$-Ge

    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  140–143
  11. On the Effect of a Random Field on Thermal Energy of Impurity Ionization in Lightly Doped Semiconductors

    Fizika i Tekhnika Poluprovodnikov, 21:12 (1987),  2217–2219
  12. Effect of Doping and Compensation Degree on $\varepsilon_{1}$-Conduction Activation Energy of $6H$-SiC : N

    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  810–819
  13. Determination of correlation between transmutation admixtures in $Ge$ under alloying with thermal-neutrons

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:21 (1987),  1295–1299
  14. Hopping conduction and metal-insulator transition in semiconducting pyropolymers

    Fizika Tverdogo Tela, 28:12 (1986),  3680–3686
  15. The paramagnetic and electric properties of the neutron transmutation produced phosphorus impurity in $6H$ – $\mathrm{SiC}$

    Fizika Tverdogo Tela, 28:6 (1986),  1659–1664
  16. Electrophysical Properties of Neutron-Doped Si$-$Ge Alloy in the Composition Range from Silicon Side. II. Galvanomagnetic Properties and Inhomogeneities

    Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  2052–2060
  17. Electrophysical Properties of Neutron-Doped Si$-$Ge Alloy in the Composition Range from Silicon Side. I. Electrophysical Parameters and $\varepsilon$ Conduction

    Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  2042–2051
  18. Impact ionization kinetics in three-level systems

    Fizika Tverdogo Tela, 27:5 (1985),  1460–1465
  19. Thermal ionization on nonequivalent nitrogen states in $\mathrm{6H}$–$Si\,C$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985),  1018–1023
  20. Electron-transfer in the highly-alloyed $6H-Si\,C\langle N\rangle$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985),  14–18
  21. NEUTRON ALLOYING OF SI1-XGEX ALLOYS IN FORMATION AREAS ASIDE FROM SILICON

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:8 (1984),  495–498
  22. Низкотемпературная проводимость нейтронно легированного ${}^{74}$Ge

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:14 (1983),  877–881

  23. In memory of Robert Arnol'dovich Suris

    UFN, 194:6 (2024),  677–678
  24. In memory of Vadim L'vovich Gurevich

    UFN, 192:2 (2022),  229–230
  25. On the Eightieth Birthday of Sergei Nikolaevich Bagayev

    Kvantovaya Elektronika, 51:10 (2021),  958
  26. Evgenii Andreevich Vinogradov (on his 80th birthday)

    UFN, 191:10 (2021),  1125–1126
  27. Aleksandr Aleksandrovich Kaplyanskii (on his 90th birthday)

    UFN, 190:12 (2020),  1343–1344
  28. In memory of Dmitrii Aleksandrovich Varshalovich

    UFN, 190:7 (2020),  783–784
  29. In memory of Vadim Vasil'evich Afrosimov

    UFN, 189:8 (2019),  901–902
  30. Поздравление Физико-техническому институту им. А.Ф. Иоффе

    Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018),  1603–1604
  31. Захарий Фишелевич Красильник (к 70-летию со дня рождения)

    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  285–286
  32. In memory of Vasilii Ivanovich Shveikin (4 February 1935 – 4 January 2018)

    Kvantovaya Elektronika, 48:3 (2018),  290
  33. Robert Arnoldovich Suris (on his 80th birthday)

    UFN, 186:12 (2016),  1381–1382
  34. Vladislav Borisovich Timofeev (on his 80th birthday)

    UFN, 186:9 (2016),  1027–1028
  35. In memory of Evgenii Pavlovich Mazets

    UFN, 183:11 (2013),  1255–1256
  36. Aleksandr Aleksandrovich Kaplyanskii (on his 80th birthday)

    UFN, 181:1 (2011),  115–116
  37. In memory of Karl Karlovich Rebane

    UFN, 178:4 (2008),  443–444
  38. In memory of Boris Aleksandrovich Mamyrin

    UFN, 177:6 (2007),  693–694
  39. Evgenii Borisovich Aleksandrov (on his seventieth birthday)

    UFN, 176:11 (2006),  1237–1238
  40. In memory of Boris Petrovich Zakharchenya

    UFN, 176:8 (2006),  907–908
  41. XVIII International Conference on Physics of Semiconductors

    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  971–973

© Steklov Math. Inst. of RAS, 2024