Shcherbakov Ivan Aleksandrovich

Publications in Math-Net.Ru

1. On some scientific results obtained at institutes of the Physical Sciences Division of the Russian Academy of Sciences over the past 25 years
   
   UFN, 194:12 (2024),  1242–1249
2. Effect of laser radiation on the gamma activity of aqueous salt solutions containing ¹⁵²Eu
   
   Kvantovaya Elektronika, 49:8 (2019),  784–787
3. Single-mode Nd : GGG disk laser with three-beam diode pumping and a degenerate cavity
   
   Kvantovaya Elektronika, 48:5 (2018),  468–471
4. Effect of laser radiation on aqueous solutions of beta-active nuclides
   
   Kvantovaya Elektronika, 47:7 (2017),  627–630
5. Lasing in a Tm:Ho:Yb₃Al₅O₁₂ crystal pumped into the ³H₆ – ³F₄ transition
   
   Kvantovaya Elektronika, 46:3 (2016),  189–192
6. Lasing in a Tm : Yb₃Al₅O₁₂ crystal pumped at 1.678 μm
   
   Kvantovaya Elektronika, 44:10 (2014),  895–898
7. Control of the spectral parameters of vanadate lasers
   
   Kvantovaya Elektronika, 44:1 (2014),  7–12
8. Study of Tm : Sc₂SiO₅ laser pumped into the ³H₆ – ³F₄ transition of Tm³⁺ ions
   
   Kvantovaya Elektronika, 43:11 (2013),  989–993
9. Two-frequency vanadate lasers with mutually parallel and orthogonal polarisations of radiation
   
   Kvantovaya Elektronika, 42:5 (2012),  420–426
10. Femtosecond lasers for microsurgery of cornea
    
    Kvantovaya Elektronika, 42:3 (2012),  262–268
11. Interference study of a diode-pumped Nd : GGG active disk
    
    Kvantovaya Elektronika, 41:8 (2011),  681–686
12. Diode-pumped Tm:Sc₂SiO₅ laser (λ = 1.98 μm)
    
    Kvantovaya Elektronika, 41:5 (2011),  420–422
13. Laser methods for generating megavolt terahertz pulses
    
    UFN, 181:1 (2011),  97–102
14. Limiting thermal regimes of active disk elements under steady-state pumping and two-dimensional temperature distribution inside the disk
    
    Kvantovaya Elektronika, 40:7 (2010),  604–614
15. Study of a Tm:Ho:YLF laser pumped by a Raman shifted erbium-doped fibre laser at 1678 nm
    
    Kvantovaya Elektronika, 40:4 (2010),  296–300
16. Specific features of thermal regimes in rectangular laser slabs under steady-state pumping
    
    Kvantovaya Elektronika, 40:1 (2010),  35–39
17. Laser physics in medicine
    
    UFN, 180:6 (2010),  661–665
18. New high-strength neodymium phosphate laser glass
    
    Kvantovaya Elektronika, 39:12 (2009),  1117–1120
19. Thermal regimes and limiting pump intensities of a disk laser with the one-dimensional temperature distribution inside the disk
    
    Kvantovaya Elektronika, 39:11 (2009),  1033–1040
20. Diode-pumped two-frequency lasers based on c-cut vanadate crystals
    
    Kvantovaya Elektronika, 39:9 (2009),  802–806
21. Distributions of temperature and thermoelastic stresses in a thin disk active element with an arbitrary optical density
    
    Kvantovaya Elektronika, 38:12 (2008),  1105–1109
22. Heat conduction of laser vanadate crystals
    
    Kvantovaya Elektronika, 38:3 (2008),  227–232
23. New possibilities of neodymium-doped vanadate crystals as active media for diode-pumped lasers
    
    Kvantovaya Elektronika, 37:10 (2007),  938–940
24. Study of the possibility of developing a multichannel-diode-pumped multikilowatt solid-state laser based on optically dense active media
    
    Kvantovaya Elektronika, 37:10 (2007),  910–915
25. A 913-nm diode-pumped quasi-three-level Nd³⁺:Gd_0.7Y_0.3VO₄ laser
    
    Kvantovaya Elektronika, 37:5 (2007),  440–442
26. Active and passive mode locking in a diode-pumped Nd:Gd_0.7Y_0.3VO₄ laser
    
    Kvantovaya Elektronika, 37:4 (2007),  315–318
27. Preparation and study of epitaxial Cr⁴⁺ : GGG films for passive Q switches in neodymium lasers
    
    Kvantovaya Elektronika, 36:7 (2006),  620–623
28. Neodymium-doped graded-index single-crystal fibre lasers
    
    Kvantovaya Elektronika, 36:7 (2006),  616–619
29. Pulsed and cw lasing in a new Cr³⁺:Li:Mg₂SiO₄ laser crystal
    
    Kvantovaya Elektronika, 34:8 (2004),  693–694
30. Solid state lasers: a major area of quantum electronics
    
    UFN, 174:10 (2004),  1120–1124
31. Diode-pumped quasi-three-level 456-nm Nd:GdVO₄ laser
    
    Kvantovaya Elektronika, 33:7 (2003),  651–654
32. Microchip laser based on an Nd³⁺:GdVO₄ crystal
    
    Kvantovaya Elektronika, 27:1 (1999),  19–20
33. Thermal conductivity of a Tm³⁺:GdVO₄ crystal and the operational characteristics of a microchip laser based on it
    
    Kvantovaya Elektronika, 27:1 (1999),  16–18
34. Q-switching in a Cr³⁺:Yb³⁺:Ho³⁺:YSGG crystal laser based on the ⁵I₆ — ⁵I₇ (λ = 2.92 μm) transition
    
    Kvantovaya Elektronika, 27:1 (1999),  13–15
35. Relaxation oscillations of the radiation from a 2-μm holmium laser with a Cr,Tm,Ho : YSGG crystal
    
    Kvantovaya Elektronika, 25:2 (1998),  151–154
36. Relaxation oscillations of the intensity of the radiation from a 2-μm thulium (Cr³⁺, Tm³⁺ : YSGG) crystal laser operating under cw and pulsed conditions
    
    Kvantovaya Elektronika, 25:1 (1998),  11–15
37. Nonlinear absorption in KTP crystals
    
    Kvantovaya Elektronika, 24:4 (1997),  367–370
38. Relaxation oscillations of the intensity of radiation from a two-micron thulium laser
    
    Kvantovaya Elektronika, 24:3 (1997),  209–212
39. Tm³⁺:GdVO₄ — a new efficient medium for diode-pumped 2-μm lasers
    
    Kvantovaya Elektronika, 24:1 (1997),  15–16
40. GdVO₄ as a new medium for solid-state lasers: some optical and thermal properties of crystals doped with Cd³⁺, Tm³⁺, and Er³⁺ ions
    
    Kvantovaya Elektronika, 22:12 (1995),  1199–1202
41. Laser with an adaptive loop cavity
    
    Kvantovaya Elektronika, 22:8 (1995),  791–792
42. Diode pumped Nd³⁺ : GdVO₄ laser with fibre input
    
    Kvantovaya Elektronika, 22:8 (1995),  788–790
43. Nature of the transfer of the electronic excitation energy from Cr³⁺ to rare-earth ions in garnet crystals
    
    Kvantovaya Elektronika, 22:8 (1995),  759–764
44. Cr⁴⁺ ions as a new efficient sensitiser of laser materials for the wavelength range 1.5–3 μm, activated with Er³⁺, Tm³⁺, Ho³⁺, and Dy³⁺ ions
    
    Kvantovaya Elektronika, 21:11 (1994),  1035–1037
45. Laser based on a Nd:GdVO₄ with ctystal semiconductor pumping
    
    Kvantovaya Elektronika, 20:12 (1993),  1152–1154
46. Periodic-pulse operation of holmium lasers using YAG and YSGG crystals
    
    Kvantovaya Elektronika, 20:12 (1993),  1149–1151
47. Model for an active medium based on a (Cr,Tm,Ho):YSGG crystal
    
    Kvantovaya Elektronika, 20:11 (1993),  1105–1110
48. Changes caused in the refractive indices of a KTP crystal by single light pulses with a wavelength of 0.53 μm
    
    Kvantovaya Elektronika, 20:8 (1993),  801–804
49. Cr, Er:YSGG laser with an optical-fiber transport system for lithotrity
    
    Kvantovaya Elektronika, 20:2 (1993),  194–197
50. FOCUSING OF SHORT IR-RANGE LASER-EMISSION
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:15 (1992),  39–41
51. The Nd:GdVO₄ crystal: a new material for diode-pumped lasers
    
    Kvantovaya Elektronika, 19:12 (1992),  1149–1150
52. Passive Q switching of pulsed Nd³⁺ lasers using YSGG:Cr⁴⁺ crystal switches exhibiting phototropic properties
    
    Kvantovaya Elektronika, 19:7 (1992),  653–656
53. Sensitization of the luminescence of the Er³⁺ ions by Ce³⁺ ions in a YAG crystal
    
    Kvantovaya Elektronika, 19:2 (1992),  167–170
54. Interionic interactions in YSGG:Cr:Tm and YSGG:Cr:Tm:Ho laser crystals
    
    Kvantovaya Elektronika, 19:2 (1992),  150–156
55. Photoinduced short-lived absorption in GSGG:Cr³⁺:Nd³⁺ and GSAG:Cr³⁺:Nd³⁺ crystals
    
    Kvantovaya Elektronika, 18:9 (1991),  1056–1059
56. Cross-relaxation deactivation of the ground state of ions of rare-earth elements in crystals
    
    Kvantovaya Elektronika, 18:9 (1991),  1042–1046
57. Generation of short nanosecond pulses in a YAG:Nd laser with a Q switch made of a GSGG:Cr:Nd crystal
    
    Kvantovaya Elektronika, 18:9 (1991),  1040–1041
58. YSGG:Cr:Nd laser with an emission efficiency of 1.5–2% frequency-doubled in a KTP crystal
    
    Kvantovaya Elektronika, 18:9 (1991),  1038–1040
59. Highly efficient YSGG:Cr:Nd laser with a polarization-closed resonator
    
    Kvantovaya Elektronika, 18:7 (1991),  805–807
60. Single-pulse YSGG:Cr:Nd laser with a 4% efficiency
    
    Kvantovaya Elektronika, 18:5 (1991),  579–581
61. Influence of the spectral composition of the exciting radiation on the lasing and spectral luminescence properties of YSGG:Cr³⁺:Tm³⁺:Ho³⁺ and GSAG:Cr³⁺:Tm³⁺:Ho³⁺ crystals
    
    Kvantovaya Elektronika, 18:2 (1991),  166–169
62. Investigation of YAG:Nd laser resonators closed by a polarization method
    
    Kvantovaya Elektronika, 17:12 (1990),  1637–1638
63. Spatial averaging of the gain in solid-state active elements
    
    Kvantovaya Elektronika, 17:12 (1990),  1559–1560
64. Influence of the spectral composition of the pump radiation on the lasing and the spectral-luminescence characteristics of a YAlO₃:Nd³⁺ crystal
    
    Kvantovaya Elektronika, 17:11 (1990),  1445–1448
65. Continuous-wave lasing of erbium ions in YSGG:Сг³⁺, Ег³⁺ crystals in the 3-μm range at room temperature
    
    Kvantovaya Elektronika, 17:10 (1990),  1277–1281
66. Crystal YSGG:Cr³⁺:Tm³⁺ laser emitting in the 2-μm range
    
    Kvantovaya Elektronika, 17:7 (1990),  861–863
67. Influence of phototropic centers on the efficiency of energy extraction from YSGG:Cr:Nd
    
    Kvantovaya Elektronika, 17:6 (1990),  723–724
68. Experimental observation of the nonadditivity of various mechanisms of population inversion of the ⁴I_11/2→⁴I_13/2 transition of the Er³⁺ ion in a YSGG:Cr³⁺:Er³⁺ crystal
    
    Kvantovaya Elektronika, 17:6 (1990),  716–717
69. Method for enhancement of the spatial homogeneity of laser radiation using polarization coupling out of radiation
    
    Kvantovaya Elektronika, 17:4 (1990),  453–454
70. Self-switching in the two-core optical fibre
    
    Dokl. Akad. Nauk SSSR, 309:3 (1989),  611–614
71. Irradiation stability of rare-earth scandium-aluminium garnets
    
    Dokl. Akad. Nauk SSSR, 305:3 (1989),  581–583
72. Fianite (ZrO₂–Y₂O₃:Er³⁺) laser emitting the 3-μm range
    
    Kvantovaya Elektronika, 16:12 (1989),  2421–2423
73. Gadolinium scandium gallium garnet (GSGG:Cr:Nd) laser with a high specific output energy
    
    Kvantovaya Elektronika, 16:12 (1989),  2413–2415
74. Holmium GSAG:Cr³⁺:Tm³⁺:Ho³⁺ crystal laser (λ = 2.09 μm) operating at room temperature
    
    Kvantovaya Elektronika, 16:11 (1989),  2176–2179
75. Highly efficient YSGG:Cr:Nd laser with frequency doubling in a KTP crystal
    
    Kvantovaya Elektronika, 16:8 (1989),  1601–1604
76. Lasers utilizing YSGG:Cr:Nd, YLF:Nd, and YAG:Nd crystals as master oscillators in combination with a phosphate glass amplifier
    
    Kvantovaya Elektronika, 16:6 (1989),  1140–1142
77. Laser utilizing YSGG:Cr:Nd and YSGG:Cr:Tm:Ho crystal active elements emitting at wavelengths of 1.06 and 2.088 μm
    
    Kvantovaya Elektronika, 16:4 (1989),  673–675
78. Generation of a giant pulse in the TEM₀₀ mode (λ = 2.088 μm) in a flashlamp-pumped YSGG:Cr:Tm:Ho crystal
    
    Kvantovaya Elektronika, 16:4 (1989),  672–673
79. Experimental manifestations of the smoothing out of thermooptic inhomogeneities in active media of solid-state lasers
    
    Kvantovaya Elektronika, 16:3 (1989),  517–519
80. Self-Q-switched high-power laser utilizing gadolinium scandium aluminum garnet activated with chromium and neodymium
    
    Kvantovaya Elektronika, 16:3 (1989),  474–477
81. Yttrium scandium gallium garnet laser with a waveguide element activated with Cr³⁺, Nd³⁺
    
    Kvantovaya Elektronika, 16:1 (1989),  28–31
82. The sensitization of neodymium ion luminescence by chromium ions in gadolinium-scandium-aluminium garnet crystals
    
    Dokl. Akad. Nauk SSSR, 299:6 (1988),  1371–1373
83. Mechanisms of color center formation in chromium-containing scandium garnets
    
    Fizika Tverdogo Tela, 30:8 (1988),  2296–2302
84. Self-compensation of thermooptic inhomogeneities in pulse-periodic solid state lasers utilizing optically dense active media
    
    Kvantovaya Elektronika, 15:11 (1988),  2323–2328
85. Photoinduced losses in a GSGG:Cr³⁺:Nd³⁺ crystal
    
    Kvantovaya Elektronika, 15:10 (1988),  2071–2077
86. Laser utilizing gadolinium scandium aluminum garnet activated with chromium and neodymium
    
    Kvantovaya Elektronika, 15:9 (1988),  1760–1761
87. Q-switched laser utilizing an yttrium scandium gallium garnet crystal activated with holmium ions
    
    Kvantovaya Elektronika, 15:5 (1988),  960–961
88. Low threshold YSGG:Cr:Er laser for the 3-μm range with a high pulse repetition frequency
    
    Kvantovaya Elektronika, 15:5 (1988),  871–872
89. Values of the gain in the 1.5 and 3 μm ranges of a chromium- and erbium-activated yttrium scandium gallium garnet crystal
    
    Kvantovaya Elektronika, 15:3 (1988),  497–499
90. Potentialities of waveguide active elements made of different materials and used in solid-state lasers characterized by high average powers
    
    Kvantovaya Elektronika, 15:3 (1988),  486–489
91. Chromium- and neodymium-activated yttrium scandium gallium garnet laser with an efficiency of 3.6% emitting linearly polarized radiation of energy of 0.46 J per single pulse, and a pulse repetition frequency 50 Hz
    
    Kvantovaya Elektronika, 15:1 (1988),  67–69
92. $\mathrm{GSGG}$ : $\mathrm{Cr}$ : $\mathrm{Nd}$ laser acousto optic Q-switch under high pumping energies
    
    Dokl. Akad. Nauk SSSR, 296:2 (1987),  335–337
93. Yttrium-scandium-aluminium garnet crystals with chromium and neodimium as active media of solid-state lasers
    
    Dokl. Akad. Nauk SSSR, 295:5 (1987),  1098–1101
94. Thermal depolarization of optical radiation in a laser active element made of GSGG:Cr³⁺:Nd³⁺ crystal
    
    Kvantovaya Elektronika, 14:8 (1987),  1663–1665
95. YSGG:Cr³⁺:Nd³⁺ as a new effective medium for pulsed solid-state lasers
    
    Kvantovaya Elektronika, 14:8 (1987),  1651–1652
96. Bandwidth-limited picosecond pulses from a YSGG:Cr³⁺:Er³⁺ laser (λ=2.79 µ) with active mode locking
    
    Kvantovaya Elektronika, 14:6 (1987),  1219–1224
97. Breakup of an ultrashort pulse in the course of self-switching of light in tunnel-coupled waveguides
    
    Kvantovaya Elektronika, 14:6 (1987),  1157–1159
98. Experimental observation of the self-switching of radiation in tunnel-coupled optical waveguides
    
    Kvantovaya Elektronika, 14:6 (1987),  1144–1147
99. Efficient room-temperature lasing (λ =2.088 µ) of yttrium scandium gallium garnet activated with chromium, thulium, and hoimium ions
    
    Kvantovaya Elektronika, 14:5 (1987),  922–923
100. Chromium- and neodymium-activated gadolinium scandium gallium garnet laser with efficient pumping and Q switching
     
     Kvantovaya Elektronika, 14:5 (1987),  916–917
101. Correlation of the condensation of the emission spectrum with time characteristics of laser pulses
     
     Kvantovaya Elektronika, 14:5 (1987),  909–910
102. Compact GSGG:Cr³⁺:Nd³⁺ laser with passive Q switching
     
     Kvantovaya Elektronika, 14:5 (1987),  905–906
103. Short-lived absorption in excited gadolinium scandium gallium garnet crystals activated with Cr and Nd
     
     Kvantovaya Elektronika, 14:4 (1987),  836–837
104. Stimulated Brillouin scattering mirror and a plasma switch in a double-pass laser amplifier
     
     Kvantovaya Elektronika, 14:3 (1987),  477–480
105. Mode locking in a neodymium laser with a gadolinium scandium gallium garnet switch
     
     Kvantovaya Elektronika, 14:2 (1987),  423–424
106. Acoustooptical properties of rare-earth gallium garnets
     
     Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:23 (1986),  1409–1411
107. Prism-resonator GSGG:Cr:Nd laser with polarization coupling out of radiation
     
     Kvantovaya Elektronika, 13:11 (1986),  2349–2350
108. Use of GSGG:Cr:Nd crystals with photochromic centers as active elements in solid lasers
     
     Kvantovaya Elektronika, 13:11 (1986),  2347–2348
109. Temperature dependence of the gain and of the lasing cross section of a ~1.06μ transition in gadolinium scandium gallium garnet crystals doped with chromium and neodymium
     
     Kvantovaya Elektronika, 13:11 (1986),  2203–2207
110. Lasing of holmium ions as a result of the ⁵I₇→⁵I₈ transition at room temperature in an yttrium scandium gallium garnet crystal activated with chromium, thulium, and holmium ions
     
     Kvantovaya Elektronika, 13:10 (1986),  2127–2129
111. Optimization of the conditions of utilization of the stored energy by Q switching active elements in the form of gadolinium scandium gallium garnet crystals activated with Cr and Nd
     
     Kvantovaya Elektronika, 13:5 (1986),  1048–1050
112. Spectral, luminescence, and lasing properties of a yttrium scandium gallium garnet crystal activated with chromium and erbium
     
     Kvantovaya Elektronika, 13:5 (1986),  973–979
113. Picosecond laser made of a gadolinium scandium gallium garnet crystal doped with Cr and Nd
     
     Kvantovaya Elektronika, 13:3 (1986),  655–656
114. Two-pass compact laser amplifier made of a gadolinium scandium gallium garnet crystal doped with Cr³⁺ and Nd³⁺
     
     Kvantovaya Elektronika, 13:2 (1986),  412–414
115. Chromium-doped scandium gallium garnet crystals as active media of lasers utilizing Ho³⁺ and Tm³⁺ infrared transitions
     
     Kvantovaya Elektronika, 13:1 (1986),  216–219
116. Laser spectrum analyzer based on the GSGG:$\mathrm{Cr}^{3+}$ crystal
     
     Dokl. Akad. Nauk SSSR, 285:1 (1985),  92–95
117. Influence of chromium ions on the color center formation in crystals with garnet structure
     
     Dokl. Akad. Nauk SSSR, 282:5 (1985),  1104–1106
118. Nonlinear light transfer in tunnel-coupled optical waveguides
     
     Kvantovaya Elektronika, 12:11 (1985),  2312–2316
119. Amplification of single pulses in a gadolinium scandium gallium garnet crystal activated with Cr³⁺ and Nd³⁺
     
     Kvantovaya Elektronika, 12:11 (1985),  2198–2199
120. Optical strength of gadolinium scandium gallium garnet active elements
     
     Kvantovaya Elektronika, 12:2 (1985),  430–432
121. Energy transfer in solids, new active media for solid-state lasers
     
     UFN, 146:2 (1985),  355–357
122. Description of temporal evolutions of the donor excited state population in rare-earth pentaphosphate crystals at quenching jump mechanism
     
     Dokl. Akad. Nauk SSSR, 278:1 (1984),  89–92
123. Resonance spectra of $\mathrm{Nd}^{3+}$ luminescence in $\alpha$-$\mathrm{Gd}_{2}\mathrm{S}_{3}$ semiconductor single crystals
     
     Fizika Tverdogo Tela, 26:8 (1984),  2405–2407
124. Investigation of a new laser active medium in the form of gadolinium scandium gallium garnet crystals activated with chromium and neodymium
     
     Kvantovaya Elektronika, 11:8 (1984),  1565–1574
125. New possibilities for Cr³⁺ ions as activators of the active media of solid-state lasers
     
     Kvantovaya Elektronika, 11:3 (1984),  487–492
126. Modelless description of time evolutions of the population of excited state of donors during their interaction with acceptors in a cubic crystal
     
     Dokl. Akad. Nauk SSSR, 271:3 (1983),  615–618
127. Investigation of energy transport processes in RE pentaphosphates
     
     Fizika Tverdogo Tela, 25:7 (1983),  1983–1988
128. Concentration quenching and $\mathrm{Nd}^{3+}$ luminescence quantum efficiency in gamma-$\mathrm{La}_{2}\mathrm{S}_{3}$ semiconductive crystals and $\mathrm{La}_{2}\mathrm{S}_{3}\cdot 2\mathrm{Ga}_{2}\mathrm{O}_{3}$ glasses
     
     Fizika Tverdogo Tela, 25:6 (1983),  1664–1669
129. Output characteristics of a gadolinium scandium gallium garnet laser operating in the pulse-periodic regime
     
     Kvantovaya Elektronika, 10:10 (1983),  1961–1963
130. Tunable laser utilizing an electronic–vibrational transition in chromium in a gadolinium scandium gallium garnet crystal
     
     Kvantovaya Elektronika, 10:9 (1983),  1916–1919
131. Characteristics of the process of filling the upper active level of neodymium in γ -La₂S₃ semiconductor crystals and La₂S₃·2Ga₂O₃ glasses
     
     Kvantovaya Elektronika, 10:8 (1983),  1560–1564
132. Determination of the optimal concentrations of active particles in laser media
     
     Kvantovaya Elektronika, 10:7 (1983),  1338–1343
133. Degradation of the electronic excitation of the ⁴F_3/2 state of Nd³⁺ ions in a γ-La₂S₃ single crystal
     
     Kvantovaya Elektronika, 10:3 (1983),  569–573
134. Characteristics of the spectral and luminescence properties of Nd³⁺ ions in γ-La₂S₃ semiconductor single crystals
     
     Kvantovaya Elektronika, 10:3 (1983),  557–562
135. Spectral, luminescence, and lasing properties of gadolinium scandium gallium garnet crystals activated with neodymium and chromium ions
     
     Kvantovaya Elektronika, 10:1 (1983),  140–144
136. Active media for high-efficiency neodymium lasers with nonselective pumping
     
     Kvantovaya Elektronika, 9:12 (1982),  2531–2533
137. Absolute quantum efficiency of the luminescence of Cr³⁺ ions in gadolinium gallium and gadolinium scandium gallium garnet crystals
     
     Kvantovaya Elektronika, 9:8 (1982),  1740–1741
138. Investigation of some photoelectric and luminescence properties of γ -La₂S₃ single crystals
     
     Kvantovaya Elektronika, 9:7 (1982),  1515–1517
139. Kinetics of nonradiative relaxation from the upper active level of neodymium in a Y₃Al₅O₁₂ crystal
     
     Kvantovaya Elektronika, 9:6 (1982),  1180–1185
140. Luminescence sensitization and its application to enhance the efficiency of solid-state laser active media
     
     Kvantovaya Elektronika, 9:4 (1982),  681–688
141. Determination of the absolute quantum efficiency of the luminescence from the upper active level of Nd³⁺ in an NdP₅O₁₄ crystal
     
     Kvantovaya Elektronika, 9:3 (1982),  612–613
142. Sensitization of neodymium ion luminescence by chromium ions in a Gd₃Ga₅O₁₂ crystal
     
     Kvantovaya Elektronika, 9:3 (1982),  568–573
143. Investigation of the mechanisms of interaction between chromium and neodymium ions in phosphate glasses
     
     Kvantovaya Elektronika, 8:7 (1981),  1442–1450
144. Dispersion of probabilities of interionic nonradiative transitions in the solids
     
     Dokl. Akad. Nauk SSSR, 254:3 (1980),  593–596
145. Synthesis and investigation of spectral, luminescence, and lasing properties of alumoborate crystals activated with chromium and neodymium ions
     
     Kvantovaya Elektronika, 7:10 (1980),  2105–2111
146. Measurements of the absolute quantum efficiency of neodymium luminescence in high-concentration glasses coactivated with chromium
     
     Kvantovaya Elektronika, 6:10 (1979),  2253–2256
147. Discrimination in inhomogeneously broadened emission spectra of neodymium by resonance laser excitation
     
     Kvantovaya Elektronika, 6:10 (1979),  2215–2219
148. Nonradiative energy transfer from Cr³⁺ to Nd³⁺ ions in glasses with high neodymium concentrations
     
     Kvantovaya Elektronika, 6:7 (1979),  1583–1585
149. Nonradiative losses due to the ⁴I_11/2–⁴I_13/2 transition of the Er³⁺ ion in Y₃Al₅O₁₂, Gd₃Sc₂Al₃O₁₂, Y₃Ga₅O₁₂, Gd₃Ga₅O₁₂, and CaF₂ crystals
     
     Kvantovaya Elektronika, 5:5 (1978),  1028–1033
150. Concentration dependences of the quantum efficiency of the luminescence emitted by neodymium-activated laser matrices and microscopic determination of these dependences
     
     Kvantovaya Elektronika, 5:4 (1978),  847–856
151. Correlation of the efficiency of cooperative sensitization of luminescence with the intensity of Rayleigh scattering
     
     Kvantovaya Elektronika, 4:8 (1977),  1661–1665
152. Selective excitation of activator centers in condensed media with inhomogeneous spectral line broadening
     
     Kvantovaya Elektronika, 4:5 (1977),  1050–1055
153. Investigation of nonradiative losses and pulse-periodic stimulated emission from Li–Nd–La phosphate glass
     
     Kvantovaya Elektronika, 4:3 (1977),  688–691
154. Investigation of anomalously weak quenching of Nd³⁺ ion luminescence in La_1–xNd_xP₅O₁₄
     
     Kvantovaya Elektronika, 4:2 (1977),  302–309
155. Cross section of the ⁴I_11/2–⁴I_13/2 laser transition in Er³⁺ ions in yttrium–erbium–aluminum garnet crystals
     
     Kvantovaya Elektronika, 4:1 (1977),  198–201
156. Spectral and generative properties of $(\mathrm{Li}-\mathrm{Nd})$-phosphatic glass
     
     Dokl. Akad. Nauk SSSR, 227:1 (1976),  75–77
157. Physicochemical, spectral, luminescence, and stimulated emission properties of phosphate glasses with high neodymium concentrations
     
     Kvantovaya Elektronika, 3:10 (1976),  2243–2247
158. Radiative and nonradiative transitions exhibited by Er³⁺ ions in mixed yttrium-erbium aluminum garnets
     
     Kvantovaya Elektronika, 3:7 (1976),  1471–1477
159. Spectroscopic properties of neodymium-activated scandium garnets
     
     Kvantovaya Elektronika, 3:3 (1976),  618–621
160. Einstein coefficients, stimulated emission cross sections, and absolute quantum efficiencies of luminescence from the metastable state ⁴F_3/2 of Nd³⁺ in laser glasses and garnet crystals
     
     Kvantovaya Elektronika, 3:1 (1976),  168–173
161. Direct measurements of luminescence quantum yield from metastable state of $^4F_{3/2}\mathrm{Nd}^{3+}$ in crystals of $\mathrm{Y}_3\mathrm{Al}_5\mathrm{O}_{12}$
     
     Dokl. Akad. Nauk SSSR, 224:1 (1975),  64–67
162. Migration of energy between Yb³⁺ ions in garnet crystals
     
     Kvantovaya Elektronika, 2:10 (1975),  2172–2182
163. Measurement of the laser transition cross section of neodymium glasses
     
     Kvantovaya Elektronika, 2:8 (1975),  1665–1670
164. Investigation of the mechanism of nonradiative relaxation of the ⁴F_3/2 metastable state of Nd³⁺ in silicate glass
     
     Kvantovaya Elektronika, 2:6 (1975),  1269–1277
165. Measurement of the probabilities of radiative transitions from a metastable state of Nd³⁺ in silicate glasses
     
     Kvantovaya Elektronika, 2:1 (1975),  133–135
166. On the quantum yield of luminescence from $\mathrm{Nd}^{3+}$ metastable state in silicate glasses and $\mathrm{Y}_3\mathrm{Al}_5\mathrm{O}_{12}$ crystals
     
     Dokl. Akad. Nauk SSSR, 216:2 (1974),  297–299
167. Measurement of probabilities of radiation transition from $\mathrm{Nd}^{3+}$ metastable level in silicate glass and garnet crystal
     
     Dokl. Akad. Nauk SSSR, 215:6 (1974),  1341–1344
168. Synthesis and investigation of Nd_x La_1–xP₅O₁₄ single crystals
     
     Kvantovaya Elektronika, 1:12 (1974),  2625–2628
169. A.M. Prokhorov General Physics Institute: Hystory of Formation and Development
     
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170. On the 60th anniversary of Nobel Prize for discovery of laser-maser principle
     
     UFN, 194:8 (2024),  899–902
171. In memory of Valery Anatol'evich Rubakov
     
     UFN, 193:2 (2023),  231–232
172. On the ninetieth birthday of O.N. Krokhin
     
     Kvantovaya Elektronika, 52:3 (2022),  306
173. Vladislav Yur'evich Khomich (on his 70th birthday)
     
     UFN, 192:4 (2022),  453–454
174. Oleg Nikolaevich Krokhin (on his 90th birthday)
     
     UFN, 192:3 (2022),  341–342
175. In memory of Vadim L'vovich Gurevich
     
     UFN, 192:2 (2022),  229–230
176. In memory of Yurii Alekseevich Trutnev
     
     UFN, 192:2 (2022),  227–228
177. Андрей Георгиевич Забродский, к 75-летию со дня рождения
     
     Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  893–894
178. On the Eightieth Birthday of Sergei Nikolaevich Bagayev
     
     Kvantovaya Elektronika, 51:10 (2021),  958
179. Viktor Anatol'evich Matveev (on his 80th birthday)
     
     UFN, 191:12 (2021),  1401–1402
180. Vadim Veniaminovich Brazhkin (on his 60th birthday)
     
     UFN, 191:10 (2021),  1127–1128
181. Evgenii Andreevich Vinogradov (on his 80th birthday)
     
     UFN, 191:10 (2021),  1125–1126
182. Nikolay Nikolaevich Rosanov (on his 80th birthday)
     
     UFN, 191:4 (2021),  445–446
183. In memory of Nikolai Nikolaevich Sibeldin
     
     UFN, 191:3 (2021),  333–334
184. In memory of Vladimir Evgen'evich Fortov
     
     UFN, 191:1 (2021),  111–112
185. In memory of Vyacheslav Vasil'evich Osiko
     
     Kvantovaya Elektronika, 50:1 (2020),  94
186. Aleksandr Aleksandrovich Kaplyanskii (on his 90th birthday)
     
     UFN, 190:12 (2020),  1343–1344
187. Aleksandr Grigor'evich Litvak (on his 80th birthday)
     
     UFN, 190:11 (2020),  1227–1228
188. In memory of Vyacheslav Vasil'evich Osiko
     
     UFN, 190:2 (2020),  223–224
189. In memory of Vyacheslav Petrovich Makarov (14 February 1938 – 6 August 2019)
     
     Kvantovaya Elektronika, 49:9 (2019),  894
190. In memory of Evgeny Mikhailovich Dianov
     
     Kvantovaya Elektronika, 49:3 (2019),  298
191. Andrei Nikolaevich Lagarkov (on his 80th birthday)
     
     UFN, 189:10 (2019),  1129–1130
192. In memory of Yurii Moiseevich Kagan
     
     UFN, 189:9 (2019),  1011–1012
193. In memory of Viktor Georgievich Veselago
     
     UFN, 189:3 (2019),  335–336
194. In memory of Mitrofan Fedorovich Stel'makh
     
     Kvantovaya Elektronika, 48:12 (2018),  1179
195. In memory of Vasilii Ivanovich Shveikin (4 February 1935 – 4 January 2018)
     
     Kvantovaya Elektronika, 48:3 (2018),  290
196. On the Sixtieth Birthday of Sergei Grigor'evich Garanin
     
     Kvantovaya Elektronika, 48:2 (2018),  188
197. Viktor Dmitrievich Selemir (on his 70th birthday)
     
     UFN, 188:12 (2018),  1367–1368
198. Radii Ivanovich Ilkaev (on his 80th birthday)
     
     UFN, 188:10 (2018),  1135–1136
199. Yurii Moiseevich Kagan (on his 90th birthday)
     
     UFN, 188:7 (2018),  799–800
200. Yurii Alekseevich Trutnev (on his 90th birthday)
     
     UFN, 187:12 (2017),  1401–1402
201. Oleg Vladimirovich Rudenko (on his 70th birthday)
     
     UFN, 187:10 (2017),  1143–1144
202. In memory of Mikhail Yakovlevich Schelev
     
     Kvantovaya Elektronika, 46:11 (2016),  1066
203. On the Eightieth Birthday of Valentin Georgievich Dmitriev
     
     Kvantovaya Elektronika, 46:11 (2016),  1065
204. On the Seventy-Fifth Birthday of Sergei Nikolaevich Bagayev
     
     Kvantovaya Elektronika, 46:10 (2016),  972
205. On the 100th Birthday of Aleksandr Mikhailovich Prokhorov
     
     Kvantovaya Elektronika, 46:7 (2016),  672–674
206. Robert Arnoldovich Suris (on his 80th birthday)
     
     UFN, 186:12 (2016),  1381–1382
207. Kev Minullinovich Salikhov (on his 80th birthday)
     
     UFN, 186:12 (2016),  1377–1378
208. In memory of Fedor Vasil'evich Bunkin
     
     UFN, 186:7 (2016),  799–800
209. Gennadii Andreevich Mesyats (on his 80th birthday)
     
     UFN, 186:2 (2016),  223–224
210. Evgeny Mikhailovich Dianov (on his 80th birthday)
     
     UFN, 186:1 (2016),  111–112
211. Vladimir Evgen'evich Fortov (on his 70th birthday)
     
     UFN, 186:1 (2016),  109–110
212. Valery Anatol'evich Rubakov (on his 60th birthday)
     
     UFN, 185:2 (2015),  221–222
213. To the memory of Aleksandr Alekseevich Manenkov
     
     Kvantovaya Elektronika, 44:6 (2014),  612
214. In memory of Tasoltan Tazretovich Basiev
     
     Kvantovaya Elektronika, 42:4 (2012),  376
215. In memory of Aleksandr Apollonovich Kazakov
     
     Kvantovaya Elektronika, 42:4 (2012),  375
216. Valentin Georgievich Dmitriev
     
     Kvantovaya Elektronika, 41:10 (2011),  956
217. Sergei Nikolaevich Bagaev (on his 70th birthday)
     
     UFN, 181:10 (2011),  1123–1124
218. Aleksandr Aleksandrovich Kaplyanskii (on his 80th birthday)
     
     UFN, 181:1 (2011),  115–116
219. Development history of the laser
     
     UFN, 181:1 (2011),  71–78
220. Errata to the article: Limiting thermal regimes of active disk elements under steady-state pumping and two-dimensional temperature distribution inside the disk
     
     Kvantovaya Elektronika, 40:8 (2010),  752
221. To the 80th birthday of A. A. Manenkov
     
     Kvantovaya Elektronika, 40:2 (2010),  188
222. Mitrofan Fedorovich Stel'makh (1918—1993)
     
     Kvantovaya Elektronika, 39:1 (2009),  110
223. Nikolai Vasil'evich Karlov (on his 80th birthday)
     
     UFN, 179:10 (2009),  1141–1142
224. Fedor Vasil'evich Bunkin (on his 80th birthday)
     
     UFN, 179:1 (2009),  109–110
225. Vyacheslav Petrovich Makarov
     
     Kvantovaya Elektronika, 38:2 (2008),  204
226. 25 Years of A. M. Prokhorov General Physics Institute
     
     Kvantovaya Elektronika, 37:10 (2007),  895–896
227. Sergei Ivanovich Yakovlenko
     
     Kvantovaya Elektronika, 37:2 (2007),  204
228. A M Prokhorov: founder of the General Physics Institute
     
     UFN, 177:6 (2007),  684–689
229. Preface to the anniversary issue
     
     Kvantovaya Elektronika, 36:7 (2006),  581
230. Evgenii Mikhailovich Dianov
     
     Kvantovaya Elektronika, 36:1 (2006),  94
231. In memory of Mikhail Leonovich Ter-Mikaelyan
     
     UFN, 174:9 (2004),  1029–1030
232. Anatolii Nikolaevich Oraevsky
     
     Kvantovaya Elektronika, 33:9 (2003),  845–846
233. In memory of Aleksandr Mikhailovich Prokhorov
     
     UFN, 172:7 (2002),  841–842
234. Igor' Il'ich Sobel'man (on his seventieth birthday)
     
     UFN, 167:3 (1997),  343–344
235. Vyacheslav Vasil'evich Osiko (on his 60th birthday)
     
     UFN, 162:4 (1992),  165–167
236. Vyacheslav Vasil'evich Osiko (on his fiftieth birthday)
     
     Kvantovaya Elektronika, 9:5 (1982),  1072
237. Мощные импульсные лазерные системы на неодимовом стекле
     
     UFN, 138:3 (1982),  538
238. Лазерная спектроскопия твердых тел
     
     UFN, 137:2 (1982),  370–371
239. Ашуров Мухсинджан Хуррамович (к 75-летию со дня рождения)
     
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