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Popov Yurii Mikhailovich

Publications in Math-Net.Ru

  1. Specific features of radiation flux formation in diode-pumped lasers and amplifiers with active elements made of Nd : YAG ceramics

    Kvantovaya Elektronika, 52:5 (2022),  449–453
  2. Lasing characteristic of new Russian laser ceramics

    Kvantovaya Elektronika, 48:9 (2018),  802–806
  3. Modelling and experimental study of temperature profiles in cw laser diode bars

    Kvantovaya Elektronika, 48:2 (2018),  115–118
  4. Quasi-cw 808-nm 300-W laser diode arrays

    Kvantovaya Elektronika, 47:1 (2017),  5–6
  5. Spectral features and thermal resistance of 976-nm cw laser diodes with a power up to 15 W

    Kvantovaya Elektronika, 46:8 (2016),  679–681
  6. 980-nm, 15-W cw laser diodes on F-mount-type heat sinks

    Kvantovaya Elektronika, 45:12 (2015),  1088–1090
  7. Limiting parameters of high-power single-stripe laser diodes in the range of 800–808 nm in the pulsed mode

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  114–119
  8. Thermal modelling of high-power laser diodes mounted using various types of submounts

    Kvantovaya Elektronika, 44:10 (2014),  899–902
  9. Emission parameters and thermal management of single high-power 980-nm laser diodes

    Kvantovaya Elektronika, 44:2 (2014),  145–148
  10. Increasing the output power of single 808-nm laser diodes using diamond submounts produced by microwave plasma chemical vapour deposition

    Kvantovaya Elektronika, 42:11 (2012),  959–960
  11. Laser diodes emitting up to 25 W at 808 nm

    Kvantovaya Elektronika, 39:3 (2009),  241–243
  12. Modification of metal film structure by radiation from a diode-pumped solid-state laser for improving the output parameters of high-power laser diodes

    Kvantovaya Elektronika, 37:11 (2007),  1055–1059
  13. A ZnSe/ZnMgSSe nanostructure for a laser electron-beam tube emitting in the blue spectral region

    Kvantovaya Elektronika, 37:9 (2007),  857–862
  14. Laser cathode-ray tube with a monolithic laser screen

    Kvantovaya Elektronika, 37:9 (2007),  853–856
  15. Highly efficient, compact diode-pumped acousto-optically Q-switched 1.064-μm Nd3+:YAG laser operating in cw and pulsed regimes

    Kvantovaya Elektronika, 35:6 (2005),  507–510
  16. Uniformity of radiation from a laser CRT based on a low-dimensional GaInP/AlGaInP structure with resonance-periodic gain

    Kvantovaya Elektronika, 34:10 (2004),  919–923
  17. On the history of the invention of the injection laser

    UFN, 174:10 (2004),  1142–1144
  18. Zero-range potentials as an algorithm for solution of quantum scattering problems

    Num. Meth. Prog., 5:1 (2004),  83–95
  19. Threshold and efficiency of a laser cathode-ray tube at room temperature

    Kvantovaya Elektronika, 33:1 (2003),  48–56
  20. Temperature regime of the laser screen of a cathode-ray tube

    Kvantovaya Elektronika, 32:4 (2002),  297–302
  21. Continuous-wave 1-W injection lasers emitting near 808 nm with a total efficiency up to 50%

    Kvantovaya Elektronika, 25:4 (1998),  303–304
  22. Semiconductor lasers

    Kvantovaya Elektronika, 24:12 (1997),  1067–1079
  23. Radiative characteristics of two-dimensional arrays of AlGaAs/GaAs diode lasers emitting at the wavelength 0.81 μm and intended to pump solid-state active elements

    Kvantovaya Elektronika, 23:11 (1996),  974–976
  24. Room-temperature laser cathode-ray tube based on an ZnCdSe/ZnSe superlattice

    Kvantovaya Elektronika, 22:8 (1995),  756–758
  25. Characteristics of the emission of 805 — 810 nm radiation by linear injection-laser arrays used to pump solid-state lasers

    Kvantovaya Elektronika, 22:2 (1995),  101–104
  26. Energy and time characteristics of a streamer laser with longitudinal coupling out of radiation

    Kvantovaya Elektronika, 16:9 (1989),  1790–1792
  27. Streamer zinc sulfide laser

    Kvantovaya Elektronika, 15:9 (1988),  1764–1766
  28. Width of the emission line of injection lasers operating in a quasisingle-frequency regime

    Kvantovaya Elektronika, 15:1 (1988),  203–207
  29. Influence of doping on the threshold characteristics of GaAs lasers

    Kvantovaya Elektronika, 15:1 (1988),  78–84
  30. LOCAL RESEARCH ON FERROELECTRICS WITH THE AID OF SECONDARY ELECTRONIC EMISSION

    Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987),  829–831
  31. Spectral characteristics and kinetics of radiation emitted by a streamer semiconductor laser

    Kvantovaya Elektronika, 14:6 (1987),  1230–1234
  32. New optoelectronic erasable storage medium (review)

    Kvantovaya Elektronika, 14:3 (1987),  437–451
  33. New reusable optoelectronic storage medium

    Kvantovaya Elektronika, 14:1 (1987),  190–192
  34. Semiconductor lasers

    UFN, 148:1 (1986),  35–53
  35. Measurement of the frequency shift of a picosecond pulse from a mode-locked injection laser

    Kvantovaya Elektronika, 12:6 (1985),  1297–1299
  36. Single crystals of ZnSe1–xTex, Zn1–xCdxSe, and ZnxCd1–xS solid solutions for electron-beam-pumped lasers

    Kvantovaya Elektronika, 12:5 (1985),  1113–1116
  37. Influence of screened Coulomb interaction on the optical amplification spectra of CdS

    Kvantovaya Elektronika, 12:5 (1985),  1084–1086
  38. Semiconductor laser utilizing transitions between size-quantization levels with separate electron and optical confinement

    Kvantovaya Elektronika, 11:9 (1984),  1885–1887
  39. Electric-discharge (streamer) InP laser

    Kvantovaya Elektronika, 11:3 (1984),  611–613
  40. Optical pumping of a CdS0.5Se0.5 laser by radiation from a CdS streamer laser

    Kvantovaya Elektronika, 10:9 (1983),  1942–1943
  41. Excitation of surface plasma oscillations and their study in structures with spatially inhomogeneous boundary conditions

    Kvantovaya Elektronika, 10:9 (1983),  1927–1929
  42. Investigation of lasing in the direction of a streamer channel in À2Â6 semiconductors

    Kvantovaya Elektronika, 10:6 (1983),  1165–1170
  43. Investigation of the radiation emitted by metal–barrier–metal structures

    Kvantovaya Elektronika, 10:4 (1983),  729–735
  44. Influence of the polarization of injection laser radiation on the efficiency of the acoustooptic interaction in anisotropic crystals

    Kvantovaya Elektronika, 10:3 (1983),  638–640
  45. Integrated-optics photodetector utilizing the external photoelectric effect in a Schottky barrier

    Kvantovaya Elektronika, 10:2 (1983),  449–452
  46. Increase of the efficiency of emission of light by surface plasma oscillations in metal–barrier–metal–liquid crystal structures

    Kvantovaya Elektronika, 9:11 (1982),  2306–2307
  47. Generation of electromagnetic oscillations in metal–barrier–metal–barrier–metal structures

    Kvantovaya Elektronika, 9:8 (1982),  1700–1702
  48. Spatial, temporal, and power characteristics of a streamer CdS semiconductor laser

    Kvantovaya Elektronika, 9:8 (1982),  1530–1535
  49. Amplification of surface plasma oscillations in complex metal–barrier–metal structures

    Kvantovaya Elektronika, 9:7 (1982),  1463–1464
  50. Influence of the electron–phonon interaction on the absorption and stimulated emission processes in CdS

    Kvantovaya Elektronika, 9:4 (1982),  806–810
  51. Laser screens made of single-crystal ZnSe and ZnTe films grown on sapphire

    Kvantovaya Elektronika, 8:6 (1981),  1380–1382
  52. Detection of light with an MIS structure operating under avalanche multiplication conditions

    Kvantovaya Elektronika, 8:4 (1981),  785–792
  53. Investigation of grating structures in composite waveguides

    Kvantovaya Elektronika, 8:4 (1981),  732–736
  54. Theory of stimulated glide of dislocations in laser semiconductor crystals under strong pumping conditions

    Kvantovaya Elektronika, 8:1 (1981),  206–209
  55. Recording of holograms using semiconductor laser radiation and a holographic selector

    Kvantovaya Elektronika, 7:12 (1980),  2654–2656
  56. Recording of binary signals in an external holographic memory with the aid of a controlled one-dimensional transparency made of PLZT ceramic

    Kvantovaya Elektronika, 7:12 (1980),  2568–2572
  57. Method for measuring the optical gain in semiconductors

    Kvantovaya Elektronika, 7:9 (1980),  2011–2014
  58. Influence of the spectrum of external illumination on transient and self-modulation processes in an injection laser

    Kvantovaya Elektronika, 7:9 (1980),  1995–1998
  59. Use of injection laser radiation for recording of data in and readout from holographic memories

    Kvantovaya Elektronika, 7:8 (1980),  1826–1827
  60. Optoelectronic internal memory utilizing a metal–nitride–oxide–semiconductor structure and a laser electron-beam tube

    Kvantovaya Elektronika, 7:7 (1980),  1585–1588
  61. Investigation of a frequency-division data channel multiplexer

    Kvantovaya Elektronika, 7:6 (1980),  1360–1362
  62. Injection laser with an unstable resonator

    Kvantovaya Elektronika, 7:5 (1980),  1089–1092
  63. Investigation of the degradation of electron-beam-tube laser screens

    Kvantovaya Elektronika, 7:5 (1980),  1058–1062
  64. Spatial modulation of light in photosensitive high-resolution metal–insulator–semiconductor structures with liquid crystals

    Kvantovaya Elektronika, 7:2 (1980),  290–298
  65. Recording of Fourier holograms in an optical system with a synthetic aperture

    Kvantovaya Elektronika, 7:2 (1980),  282–289
  66. Investigation of the conditions for matching of semiconductor sources to thin-film planar and stripe waveguides

    Kvantovaya Elektronika, 6:10 (1979),  2262–2264
  67. Coherent interaction between high-power light pulses and exciton–impurity centers in molecular crystals

    Kvantovaya Elektronika, 6:9 (1979),  1971–1976
  68. Spatial modulation of light in a photosensitive structure composed of a liquid crystal and an insulated gallium arsenide crystal

    Kvantovaya Elektronika, 6:8 (1979),  1810–1812
  69. Digital data processing in optoelectronic devices (review)

    Kvantovaya Elektronika, 6:6 (1979),  1125–1147
  70. Theory of defect-forming resonance electron capture in laser crystals

    Kvantovaya Elektronika, 6:5 (1979),  1057–1061
  71. Scanning semiconductor laser with transverse electron-beam pumping

    Kvantovaya Elektronika, 6:3 (1979),  603–604
  72. Mechanism of stimulated emission from laser screens made of II-VI semiconductor compounds

    Kvantovaya Elektronika, 6:1 (1979),  189–196
  73. Propagation of high-power light pulses inducing transitions between bands with different effective masses in a semiconductor

    Kvantovaya Elektronika, 6:1 (1979),  120–126
  74. Some algorithms of the effective solution of problems on the optoelectronic processor

    Dokl. Akad. Nauk SSSR, 243:4 (1978),  870–873
  75. Anomalous stimulated emission kinetics of semiconductor lasers with asymmetric waveguide structures. II. Theory

    Kvantovaya Elektronika, 5:11 (1978),  2408–2415
  76. Influence of the operation regime of an injection laser on the efficiency of coupling of its radiation into an optical waveguide

    Kvantovaya Elektronika, 5:9 (1978),  2038–2041
  77. Investigation of the dependence of the radiative properties of cadmium sulfide single crystals on the equilibrium carrier density

    Kvantovaya Elektronika, 5:3 (1978),  642–646
  78. Methods of realization of an optical processor with variable operators

    Kvantovaya Elektronika, 5:3 (1978),  533–542
  79. Principles of design of optical processors with variable operators

    Kvantovaya Elektronika, 5:3 (1978),  526–532
  80. Propagation of high-power light pulses through semiconductors under interband interaction conditions

    Kvantovaya Elektronika, 5:2 (1978),  359–370
  81. Influence of surface recombination on stimulated emission threshold of semiconductor lasers

    Kvantovaya Elektronika, 5:1 (1978),  148–150
  82. Stimulated emission as a result of television-type operation of a laser cathode-ray tube with its screen at room temperature

    Kvantovaya Elektronika, 4:10 (1977),  2246–2248
  83. Formation of an image in a coherent synthesized-aperture system

    Kvantovaya Elektronika, 4:9 (1977),  1981–1989
  84. Kinetics of stimulated emission of excimer radiation from inert gases in a nonself-sustained electric discharge

    Kvantovaya Elektronika, 4:8 (1977),  1722–1731
  85. Eight-channel optical fiber communication line between computer units

    Kvantovaya Elektronika, 4:7 (1977),  1610–1613
  86. Enhancement of the resolving power of coherent optical systems by aperture synthesis method

    Kvantovaya Elektronika, 4:7 (1977),  1608–1610
  87. Coherent two-photon interaction of laser radiation with Frenkel excitons

    Kvantovaya Elektronika, 4:7 (1977),  1578–1581
  88. Determination of the depth of the disturbed layer in laser screens made of cadmium sulfide single crystals

    Kvantovaya Elektronika, 4:6 (1977),  1357–1359
  89. Influence of phase modulation on two-photon coherent interaction of light pulses with resonant media

    Kvantovaya Elektronika, 4:3 (1977),  651–653
  90. Laser screens made of single-crystal CdS, CdSxSe1–x, and ZnSe ingots

    Kvantovaya Elektronika, 4:2 (1977),  351–354
  91. Influence of surface treatment on cathodoluminescence of CdS single crystals

    Kvantovaya Elektronika, 4:1 (1977),  58–62
  92. High-capacity holographic memories with synthesized aperture

    Kvantovaya Elektronika, 3:11 (1976),  2325–2336
  93. Influence of relaxation processes on coherence of twophoton interaction between light pulses and resonant media

    Kvantovaya Elektronika, 2:12 (1975),  2621–2624
  94. Reversible recording of optical information in metal-dielectric-semiconductor structures

    Kvantovaya Elektronika, 2:9 (1975),  2013–2018
  95. Coherent effects during propagation of ultrashort light pulses in a medium under two-photon interaction conditions

    Kvantovaya Elektronika, 2:6 (1975),  1147–1152
  96. Theory of the propagation of short and ultrashort light pulses in a semiconductor under interband absorption conditions

    Kvantovaya Elektronika, 2:2 (1975),  332–336
  97. Calculation of the matching of an injection laser to a dielectric waveguide

    Kvantovaya Elektronika, 1:8 (1974),  1780–1784
  98. Coherent effects in the propagation of ultrashort light pulses in resonant media. Part II (Review)

    Kvantovaya Elektronika, 1:6 (1974),  1309–1344
  99. Amplification of light in semiconductors associated with the recombination of excitons present in high concentrations

    Kvantovaya Elektronika, 1:5 (1974),  1258–1261
  100. Coherent effects in the propagation of ultrashort light pulses in resonant media. Part I (review)

    Kvantovaya Elektronika, 1:4 (1974),  757–785
  101. Photoluminescence and gain of CdS and CdSe single crystals under electron-beam excitation conditions

    Kvantovaya Elektronika, 1:3 (1974),  653–659
  102. Modulation of radiation in semiconductors due to the Gunn effect

    Kvantovaya Elektronika, 1:1 (1974),  155–158
  103. Theory of the gain of semiconductor lasers

    Kvantovaya Elektronika, 1:1 (1974),  62–68
  104. Optical memory based on a metal–insulator–semiconductor–insulator–metal structure

    Kvantovaya Elektronika, 1:1 (1974),  48–53
  105. Saturation of optical transitions not conserving quasimomentum in semiconductors in the presence of inhomogeneous fields

    Kvantovaya Elektronika, 1:1 (1974),  43–47
  106. Possibility of construction of an arithmetic unit based on controlled optical transparencies

    Kvantovaya Elektronika, 1:1 (1974),  27–34
  107. Self-induced transparency effect

    UFN, 114:1 (1974),  97–131
  108. Calculation of the quasi-Fermi levels and characteristics of spontaneous emission from heavily doped semiconductors

    Kvantovaya Elektronika, 1973, no. 5(17),  117–119
  109. Metal-insulator-semiconductor-insulator-metal information storage system with optical write and read operations

    Kvantovaya Elektronika, 1972, no. 5(11),  58–62
  110. Propagation of ultrashort light pulses in a semiconductor under two-photon resonance conditions

    Kvantovaya Elektronika, 1972, no. 4(10),  111–113
  111. Optical gain of heavily doped semiconductors

    Kvantovaya Elektronika, 1972, no. 2(8),  77–83
  112. Amplification of a light signal in metal–insulator–semiconductor–insulator–metal structures

    Kvantovaya Elektronika, 1971, no. 6,  113–114
  113. Passage of an ultrashort coherent light pulse through a semiconductor

    Kvantovaya Elektronika, 1971, no. 5,  28–36
  114. Influence of impurity concentration on the threshold characteristics of semiconductor lasers

    Kvantovaya Elektronika, 1971, no. 3,  15–22
  115. Stimulated emission in the vacuum ultraviolet region

    Kvantovaya Elektronika, 1971, no. 1,  29–34
  116. The possibility to modulate the radiation from a semiconducting quantum generator by heating the current carriers

    Dokl. Akad. Nauk SSSR, 173:5 (1967),  1036–1039
  117. The influence of a strong magnetic field on the recombination radiation in semiconductors

    Dokl. Akad. Nauk SSSR, 167:3 (1966),  559–561
  118. Semiconducting quantum generator with the $p$–$n$ transition in $\mathrm{GaAs}$

    Dokl. Akad. Nauk SSSR, 150:2 (1963),  275–278
  119. Generation, amplification, and detection of infrared and optical radiation by quantum-mechanical systems

    UFN, 72:2 (1960),  161–209

  120. On the ninetieth birthday of O.N. Krokhin

    Kvantovaya Elektronika, 52:3 (2022),  306
  121. Oleg Nikolaevich Krokhin (on his 90th birthday)

    UFN, 192:3 (2022),  341–342
  122. In memory of Mitrofan Fedorovich Stel'makh

    Kvantovaya Elektronika, 48:12 (2018),  1179
  123. In memory of Vasilii Ivanovich Shveikin (4 February 1935 – 4 January 2018)

    Kvantovaya Elektronika, 48:3 (2018),  290
  124. The early history of the injection laser

    UFN, 181:1 (2011),  102–107
  125. Symposium on the coherent optical radiation of semiconductor compounds and structures (Zvenigorod, 27 — 29 November 2007)

    Kvantovaya Elektronika, 38:3 (2008),  294–297
  126. Anatolii Nikolaevich Oraevsky

    Kvantovaya Elektronika, 33:9 (2003),  845–846
  127. Errata to the article: Temperature regime of the laser screen of a cathode-ray tube

    Kvantovaya Elektronika, 32:6 (2002),  564
  128. Oleg Nikolaevich Krokhin (on his seventieth birthday)

    UFN, 172:6 (2002),  723–724
  129. In Memory of Nikolai Gennadievich Basov

    Kvantovaya Elektronika, 31:8 (2001),  751
  130. In memory of Oleg Vladimirovich Bogdankevich

    Kvantovaya Elektronika, 31:5 (2001),  470
  131. Nikolai Gennadievich Basov (on his seventieth birthday)

    UFN, 163:1 (1993),  109–111
  132. Vitaliĭ Sergeevich Zuev (on his fiftieth birthday)

    Kvantovaya Elektronika, 10:7 (1983),  1520

© Steklov Math. Inst. of RAS, 2025