Bolkhovityanov Yurii Borisovich

Publications in Math-Net.Ru

1. Forming dislocation pairs in the Ge/GeSi/Si(001) heterostructure
   
   Fizika Tverdogo Tela, 61:2 (2019),  284–287
2. GaAs epitaxy on Si substrates: modern status of research and engineering
   
   UFN, 178:5 (2008),  459–480
3. Silicon – germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures
   
   UFN, 171:7 (2001),  689–715
4. HIGHLY PURE P-GAAS GROWN FROM GAAS SOLUTION TO BI ALLOYED BY YTTERBIUM
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:9 (1990),  37–40
5. SEMICLEAR ARSENIDE-GALLIUM PHOTOCATHODE ON THE GLASS WITH PHOTOSENSITIVITY UP TO 1700-MCA/LM
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:7 (1990),  25–29
6. CHARACTERISTICS OF THE FORMATION OF A SOLID-PHASE UNDER A CONTACT CHANGING OF SOLUTIONS - GROWTH OF GAAS ON ALGAAS SURFACE
   
   Zhurnal Tekhnicheskoi Fiziki, 59:8 (1989),  57–63
7. TRANSITION LAYERS IN ALGAAS/GAAS HETEROSTRUCTURES, GROWN BY THE CONTACT SOLUTION RENEWING - THEORY AND EXPERIMENT
   
   Zhurnal Tekhnicheskoi Fiziki, 59:3 (1989),  178–185
8. NATURE OF ALGAAS SEPARATING LAYER ON THE GAAS SURFACE DURING ITS ISOTHERMAL CONTACTS WITH THE AL-GA-AS LIQUID-PHASE
   
   Zhurnal Tekhnicheskoi Fiziki, 56:3 (1986),  601–603
9. Deep Level Induced into GaAs by Doping with Sb Isovalent Impurity
   
   Fizika i Tekhnika Poluprovodnikov, 20:8 (1986),  1392–1395