Gritsenko Vladimir Alekseevich

Publications in Math-Net.Ru

1. Forming-free memristors based on hafnium oxide processed in electron cyclotron resonance hydrogen plasma
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 115:2 (2022),  89–93
2. Multiphonon ionization of deep centers in amorphous boron nitride
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 114:7 (2021),  498–501
3. Optical and electrochromic properties of thin films of ambipolar polyimides with pendant groups based on thioxanthenone derivatives
   
   Optics and Spectroscopy, 129:11 (2021),  1393–1399
4. Atomic structure and optical properties of plasma enhanced chemical vapor deposited SiCOH Low-k dielectric film
   
   Optics and Spectroscopy, 129:5 (2021),  618
5. Optical properties of (ZrO$_{2}$)$_{1-x}$(Y$_{2}$O$_{3}$)$_{x}$ ($x$ = 0–0.037) crystals grown by directional crystallization of the melt
   
   Optics and Spectroscopy, 128:12 (2020),  1830–1836
6. Optical properties of thin films of SiO$_{x}$ $(x<2)$, obtained by exposure of thermal silicon dioxide in hydrogen plasma
   
   Optics and Spectroscopy, 128:10 (2020),  1467–1472
7. Nanoscale potential fluctuations in SiO$_{x}$ synthesized by the plasma enhanced chemical vapor deposition
   
   Fizika Tverdogo Tela, 61:12 (2019),  2528–2535
8. Structure of Hf$_{0.9}$La$_{0.1}$O$_2$ ferroelectric films obtained by the atomic layer deposition
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 109:2 (2019),  112–117
9. Optical properties of nonstoichiometric silicon oxide SiO$_{x}$ ($x<$ 2)
   
   Optics and Spectroscopy, 127:5 (2019),  769–773
10. The evolution of the conductivity and cathodoluminescence of the films of hafnium oxide in the case of a change in the concentration of oxygen vacancies
    
    Fizika Tverdogo Tela, 60:10 (2018),  2006–2013
11. Atomic and electronic structures of metal-rich noncentrosymmetric ZrO$_x$
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 108:4 (2018),  230–235
12. Electronic structure of amorphous SiO$_{x}$ with variable composition
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 108:2 (2018),  114–118
13. Electronic structure of oxygen vacancies in the orthorhombic noncentrosymmetric phase Hf$_{0.5}$Zr$_{0.5}$O$_2$
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 107:1 (2018),  62–67
14. Optical properties of nonstoichiometric tantalum oxide TaO$_{x}$ ($x<$ 5/2) according to spectral-ellipsometry and Raman-scattering data
    
    Optics and Spectroscopy, 124:6 (2018),  777–782
15. Short-range order and charge transport in SiO$_{x}$: experiment and numerical simulation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018),  81–88
16. Local oscillations of silicon–silicon bonds in silicon nitride
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018),  37–45
17. Relaxation of the electric current in Si$_{3}$N$_{4}$: Experiment and numerical simulation
    
    Fizika Tverdogo Tela, 59:1 (2017),  49–53
18. Hot electrons in silicon oxide
    
    UFN, 187:9 (2017),  971–979
19. Si-Si bond as a deep trap for electrons and holes in silicon nitride
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:3 (2016),  189–193
20. Charge transport mechanism in thin films of amorphous and ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 102:8 (2015),  610–614
21. Transport mechanisms of electrons and holes in dielectric films
    
    UFN, 183:10 (2013),  1099–1114
22. Electronic structure of silicon nitride
    
    UFN, 182:5 (2012),  531–541
23. Application and electronic structure of high-permittivity dielectrics
    
    UFN, 180:6 (2010),  587–603
24. Multiphonon mechanism of the ionization of traps in Al$_2$O$_3$Experiment and numerical simulation
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:10 (2009),  599–602
25. Structure of silicon/oxide and nitride/oxide interfaces
    
    UFN, 179:9 (2009),  921–930
26. Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides
    
    UFN, 178:7 (2008),  727–737
27. Electronic structure of $\alpha$-Al$_2$O$_3$: ab initio simulations and comparison with experiment
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 85:3 (2007),  197–201
28. Two-band conductivity of ZrO₂ synthesized by molecular beam epitaxy
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:11 (2005),  721–723
29. Multiphonon ionization of deep centers in amorphous silicon nitride: Experiment and numerical simulations
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 77:7 (2003),  455–458
30. Electronic structure of $\mathrm{Si}$–$\mathrm{H}$ and $\mathrm{N}$–$\mathrm{H}$ bonds in $\alpha$-$\mathrm{SiN}_{x}:\mathrm{H}$
    
    Fizika Tverdogo Tela, 34:8 (1992),  2424–2430
31. Shift of the absorption edge in irradiated amorphous silicon nitride
    
    Dokl. Akad. Nauk SSSR, 287:6 (1986),  1381–1383
32. Multiphonon capture and radiative transitions in $\alpha$-$\mathrm{Si}_{3}\mathrm{N}_{4}$
    
    Fizika Tverdogo Tela, 28:10 (1986),  3239–3242
33. Electron structure of amorphous $\mathrm{Si}_{3}\mathrm{N}_{4}$
    
    Fizika Tverdogo Tela, 26:6 (1984),  1685–1690
34. Cathodoluminescence of amorphous $\mathrm{Si}_{3}\mathrm{N}_{4}$
    
    Fizika Tverdogo Tela, 25:5 (1983),  1560–1562