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Tarasov Il'ya Sergeevich

Publications in Math-Net.Ru

  1. Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition

    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  196–200
  2. Polarization effects in quantum-well In$_{28}$Ga$_{72}$As/GaAs heterolasers

    Fizika Tverdogo Tela, 59:9 (2017),  1684–1690
  3. Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers

    Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  998–1003
  4. Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types

    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  124–132
  5. All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017),  31–37
  6. Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1414–1419
  7. Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 $\mu$m

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1320–1324
  8. Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1283–1294
  9. On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1247–1252
  10. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  869–876
  11. Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass

    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  834–838
  12. Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  679–682
  13. Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure

    Kvantovaya Elektronika, 46:9 (2016),  777–781
  14. Integrated high-order surface diffraction gratings for diode lasers

    Kvantovaya Elektronika, 45:12 (2015),  1091–1097
  15. Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)

    Kvantovaya Elektronika, 45:10 (2015),  879–883
  16. Study of the absorption coefficient in layers of a semiconductor laser heterostructure

    Kvantovaya Elektronika, 45:7 (2015),  604–606
  17. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers

    Kvantovaya Elektronika, 45:7 (2015),  597–600
  18. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

    Kvantovaya Elektronika, 44:11 (2014),  993–996
  19. Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

    Kvantovaya Elektronika, 44:10 (2014),  907–911
  20. Calculation of output characteristics of semiconductor quantum-well lasers with account for both electrons and holes

    Kvantovaya Elektronika, 44:9 (2014),  801–805
  21. Threshold characteristics of semiconductor lasers under conditions of violation of electroneutrality in quantum wells

    Kvantovaya Elektronika, 43:5 (2013),  428–432
  22. High-power semiconductor separate-confinement double heterostructure lasers

    Kvantovaya Elektronika, 40:8 (2010),  661–681
  23. Heterolaser frequency tuning under the action of ultrasonic waves

    Pis'ma v Zh. Èksper. Teoret. Fiz., 78:2 (2003),  77–81
  24. SEMICONDUCTING SOURCE OF PICOSECOND PULSES ON 1.55-MU-M WAVE-LENGTH

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:24 (1992),  23–27
  25. Совершенствование процесса заращивания и получение одномодовых зарощенных InGaAsP/InP-лазеров ($\lambda=1.3$ мкм) с мощностью излучения 160 мВт

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1414–1418
  26. Экспериментальное и теоретическое исследование особенностей пороговых и мощностных характеристик РО ДГС InGaAsP/InP-лазеров (${\lambda=1.3}$ мкм)

    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  928–933
  27. GROWN SINGLE-MODE CONTINUOUS INGAASP/INP SEPARATE CONFINEMENT LASERS WITH (LAMBDA = 1.3 MU-M)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991),  17–21
  28. SOURCE OF PICOSECOND PULSES BASED ON SEMICONDUCTING LASER WITH FIBER RESONATOR

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:3 (1991),  14–17
  29. Direct amplitude modulation of the radiation emitted by (InGa)AsP/InP double-heterostructure lasers (λ = 1.3 μm) with separate confinement

    Kvantovaya Elektronika, 18:3 (1991),  281–286
  30. OPTICAL MODULE BASED ON QUANTUM-DIMENTIONAL INGAASP-INP LASER OF (LAMBDA=1.3 MU-M) WATT RANGE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:21 (1990),  35–41
  31. DEPENDENCE OF THRESHOLD CURRENT-DENSITY AND DIFFERENTIAL QUANTUM EFFICIENCY OF SEPARATE CONFINEMENT DHS INGAASP/INP (LAMBDA=1,3MU-M) LASERS ON OUTLET LOSSES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:9 (1990),  50–54
  32. Distribution and spatial coherence of radiation fields of InGaAsP/lnP double-heterostructure separate-confinement lasers emitting at λ = 1.3 μm

    Kvantovaya Elektronika, 17:1 (1990),  14–16
  33. OPTICAL REVERSIVE REGISTRATION OF INFORMATION ON VO2 FILMS

    Zhurnal Tekhnicheskoi Fiziki, 59:10 (1989),  174–177
  34. FORMATION OF HIGH-FREQUENCY TRAIN OF PICOSECOND OPTICAL PULSES AT 1.32-MU-M WAVE-LENGTH

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:24 (1989),  64–68
  35. SOURCE OF PICOSECOND PULSES FOR HIGH-SPEED SOLITON SYSTEM OF INFORMATION-TRANSFER

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:9 (1989),  25–29
  36. BISTABLE REGIME OF GENERATION OF QUANTUM-DIMENSIONAL INGAASP/INP-LASERS WITH EXTERNAL DISPERSION RESONATOR

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:23 (1988),  2128–2132
  37. CURRENT RETUNING CHARACTERISTICS OF INGAASP/INP HETEROLASERS WITH AN EXTERNAL DISPERSION RESONATOR

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:23 (1988),  2116–2120
  38. MS INGAASP/INP (LAMBDA=1.3-MU-M) QUANTUM DIMENSIONAL SEPARATE CONFINEMENT LASERS (JPOR=380A/CM2,P=0.5 BT, T=18-DEGREES-C)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  241–246
  39. OVERGROWN CONTINUOUS INGAASP-INP (LAMBDA=1,3-MU-M) SEPARATE CONFINEMENT LASERS (J=360A-CM2,P=360-MVT,T=18-DEGREES-C)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988),  99–104
  40. STUDY OF THE DURABILITY OF CONTINUOUS INGAASP/INP (LAMBDA=1.3 MU-M) MS SEPARATE CONFINEMENT LASERS

    Zhurnal Tekhnicheskoi Fiziki, 57:9 (1987),  1822–1824
  41. Quantum-Dimensional InGaAsP/InP Double-Heterostructure Lasers of Separate Limitation with ${\lambda=1.3}$ $\mu m$ (${J_{\text{п}}=410\,\text{А/cm}^{2}}$, ${T=23^{\circ}}$С)

    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  824–829
  42. Continuous $In\,Ga\,As\,P/In\,P$ ($\lambda=1.3$ mu-m) separate confinement lasers of 270 mVt ($T=20^{\circ}$ C, $I=900$ mA, exterior dielectric mirror)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  552–557
  43. Power separate confinement $In\,Ga\,As\,P/In\,P$-based lasers for FOCD ($\lambda=1,55$ mu-m, $T=300$ K, $P=50$ mVt)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  535–537
  44. Continuous intrastrip $In\,Ga\,As\,P/In\,P$ SL DH-lasers with $\lambda=1.3$-mu-m – reduction of thresholds and the capacity increase

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:11 (1986),  660–663
  45. Low-threshold in $In\,Ga\,As\,P/In\,P$ lasers of divided limitation with $\lambda=1.3$-mu-m and $\lambda =1.55$-mu-m ($I_{\text{threshold}}=600-700\,\text{A/cm}^{2}$)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986),  210–215
  46. MESA-STRIPE INGAASP/INP(LAMBDA=1.5MKM) LASERS OF CONTINUOUS ACTION

    Zhurnal Tekhnicheskoi Fiziki, 55:9 (1985),  1872–1876
  47. Special Features of Temperature Dependence of Thresholds in InGaAsP/InP DH Lasers (${\lambda=1.3}\, \mu m$) with Separate Limitation and Thin Active Region

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1496–1498
  48. Special Features of Threshold Characteristics of InGaAsP/InP DH Lasers (${\lambda=1.3}\,\mu m$) with Separate Limitation and Superthin Active Regions

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1420–1423
  49. Injection Continuous 60 mVt Laser Based on Liquid-Phase InGaAsP Double-Heterostructure of Separate Limitation (${\lambda=1.35}\,\mu m$, ${T=300}$ K)

    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  456–459
  50. High-power mesastrip PO $In\,Ga\,As/In\,P$ lasers for FOCD ($\lambda=1.3$ mu-m, $t=18^\circ$ C, $i=300$ mA, $p=28$ mVt in the fiber of $50\,\mu m$ diameter

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:22 (1985),  1345–1349
  51. Continuous $In\,Ga\,As\,P/In\,P$ RO DGS laser with $17\%$ ($\lambda=1.32\,\mu m$, $t=290$ K) efficiency

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1157–1162
  52. A generalization of an interpolation algebraic polynomial to the case of several variables

    Izv. Vyssh. Uchebn. Zaved. Mat., 1984, no. 2,  54–55
  53. INFLUENCE OF TECHNOLOGICAL FACTORS ON LUMINESCENT CHARACTERISTICS OF INGAASP/INP(LAMBDA=1.55MKM) HETEROLASERS

    Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984),  2047–2050
  54. Обратные токи в $p{-}n$-гетероструктурах InGaAsP/InP

    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  2036–2040
  55. Влияние несоответствия параметров решеток на $I{-}V$-характеристики InGaAsP/InP $p{-}n$-гетероструктур

    Fizika i Tekhnika Poluprovodnikov, 18:8 (1984),  1413–1416
  56. Tunnel-Type Currents in InGaAsP/InP $p{-}n$ Heterostructures

    Fizika i Tekhnika Poluprovodnikov, 18:6 (1984),  1034–1038
  57. LOW-THRESHOLD MEZOBAND INGAASP/INP CONTINUOUS OPERATION LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:16 (1984),  961–964
  58. BAND LASERS BASED ON DHS (DOUBLE HETEROSTRUCTURE) IN THE INGAASP-INP SYSTEM, PRODUCED BY OXYGEN-ATOMS IMPLANTATION

    Zhurnal Tekhnicheskoi Fiziki, 53:10 (1983),  1973–1978
  59. LOW-THRESHOLD BAND THICK HETEROLASERS BASED ON INGAASP/INP(GAMMA-CONGRUENT-TO-1,3 MKM), OBTAINED BY HYBRID TECHNOLOGY

    Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983),  1413–1414
  60. Особенности поляризации люминесценции и константы деформационного потенциала в InP $n$- и $p$-типа проводимости

    Fizika i Tekhnika Poluprovodnikov, 17:6 (1983),  997–1002
  61. Multichannel duplex fiber-optic communication line operating at the wavelength of ~1.3 μ

    Kvantovaya Elektronika, 9:8 (1982),  1698–1700
  62. On the inversion of a Wronskian matrix

    Izv. Vyssh. Uchebn. Zaved. Mat., 1981, no. 8,  80–82
  63. Prototype fiber-optical communication line with spectral multiplexing in the 1.3μ region

    Kvantovaya Elektronika, 6:11 (1979),  2487–2490
  64. The inductive theory of non-commutative determinants

    Izv. Vyssh. Uchebn. Zaved. Mat., 1964, no. 4,  152–161
  65. The theory of non-singular hyperstrips in a centro-affine space

    Izv. Vyssh. Uchebn. Zaved. Mat., 1959, no. 4,  161–167

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