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Ivanov Sergei Viktorovich

Publications in Math-Net.Ru

  1. Distribution of misfit dislocations and elastic mechanical stresses in metamorphic buffer InAlAs layers of various constructions

    Fizika Tverdogo Tela, 63:1 (2021),  85–90
  2. Photoconductive THz detector based on new functional layers in multi-layer heterostructures

    Optics and Spectroscopy, 129:6 (2021),  741–746
  3. Development and study of the $p$–$i$–$n$-диодов GaAs/AlGaAs tunnel diodes for multijunction converters of high-power laser radiation

    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  285–291
  4. Stimulated emission at a wavelength of $2.86 \mu$m from In(Sb, As)/In(Ga, Al)As/GaAs metamorphic quantum wells under optical pumping

    Pis'ma v Zh. Èksper. Teoret. Fiz., 110:5 (2019),  297–302
  5. Effect of strongly mismatched GaAs and InAs inserts in a InAlAs buffer layer on the structural and optical properties of metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs quantum-confined heterostructures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:6 (2019),  381–386
  6. Highly efficient semiconductor emitter of single photons in the red spectral range

    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:3 (2019),  147–151
  7. Boson peak related to Ga-nanoclusters in AlGaN layers grown by plasma-assisted molecular beam epitaxy at Ga-rich conditions

    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1519
  8. Molecular-beam epitaxy of two-dimensional gase layers on GaAs(001) and GaAs(112) substrates: structural and optical properties

    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1152–1158
  9. Stimulated emission, photoluminescence, and localisation of nonequilibrium charge carriers in ultrathin (monolayer) GaN/AlN quantum wells

    Kvantovaya Elektronika, 49:6 (2019),  535–539
  10. Förster energy transfer in arrays of epitaxial CdSe/ZnSe quantum dots involving bright and dark excitons

    Fizika Tverdogo Tela, 60:8 (2018),  1575–1579
  11. Single-photon emission from InAs/AlGaAs quantum dots

    Fizika Tverdogo Tela, 60:4 (2018),  687–690
  12. Single-photon emitter at 80 K based on a dielectric nanoantenna with a CdSe/ZnSe quantum dot

    Pis'ma v Zh. Èksper. Teoret. Fiz., 108:3 (2018),  201–205
  13. Features of the selective growth of GaN nanorods on patterned $c$-sapphire substrates of various configurations

    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1663–1667
  14. Site-controlled growth of GaN nanorods with inserted InGaN quantum wells on $\mu$-cone patterned sapphire substrates by plasma-assisted MBE

    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  526
  15. Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands

    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  515
  16. Red single-photon emission from InAs/AlGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  480
  17. Optimization of the structural properties and surface morphology of a convex-graded In$_{x}$Al$_{1-x}$As ($x$ = 0.05–0.83) metamorphic buffer layer grown via MBE on GaAs (001)

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  127–132
  18. The effect of charge transport mechanisms on the efficiency of Al$_{x}$Ga$_{1-x}$As/GaAs photodiodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:22 (2018),  33–41
  19. Nanoheterostructures with CdTe/Zn(Mg)(Se)Te quantum dots for single-photon emitters grown by molecular beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018),  94–102
  20. Spontaneous formation of indium clusters in InN epilayers grown by molecular-beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  42–49
  21. The interference enhancement of light polarization conversion from structures with a quantum well

    Fizika Tverdogo Tela, 59:11 (2017),  2148–2153
  22. Manifestation of $PT$ symmetry in the exciton spectra of quantum wells

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1605–1609
  23. Stress generation and relaxation in (Al, Ga)N/6$H$-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:9 (2017),  67–74
  24. Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III–N heterostructures by molecular-beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:5 (2017),  60–67
  25. Photoreflectance of indium antimonide

    Fizika Tverdogo Tela, 58:12 (2016),  2307–2313
  26. AlGaN nanostructures with extremely high quantum yield at 300 K

    Fizika Tverdogo Tela, 58:11 (2016),  2180–2185
  27. Resonance energy transfer in a dense array of II–VI quantum dots

    Fizika Tverdogo Tela, 58:11 (2016),  2175–2179
  28. Isolated quantum emitters originating from defect centers in a ZnSe/ZnMgSSe heterostructure

    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:2 (2016),  108–113
  29. Heterostructures with CdTe/ZnTe quantum dots for single photon emitters grown by molecular beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:24 (2016),  64–71
  30. Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  33–39
  31. Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  57–63
  32. Complex use of the diffraction techniques in depth profiling of the crystal lattice parameter and composition of InGaAs/GaAs gradient layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016),  40–48
  33. X-ray diffractometry of AlN/$c$-sapphire templates obtained by plasma-activated molecular beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  61–69
  34. Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow–green spectral region

    Kvantovaya Elektronika, 43:5 (2013),  418–422
  35. Plasmon effects in In(Ga)N nanostructures

    UFN, 179:9 (2009),  1007–1012
  36. Magnetooptics of (Zn,Cd,Mn)Te/ZnTe heterostructures with a small discontinuity in the valence band potential

    Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008),  922–926
  37. Evidence for Mn$^{2+}$ fine structure in CdMnSe/ZnSe quantum dots caused by their low dimensionality

    Pis'ma v Zh. Èksper. Teoret. Fiz., 88:9 (2008),  724–728
  38. Excitation density distribution in electron-beam-pumped ZnSe semiconductor lasers

    Kvantovaya Elektronika, 38:12 (2008),  1097–1100
  39. Effect of the spin-orbit interaction on the cyclotron resonance of two-dimensional electrons

    Pis'ma v Zh. Èksper. Teoret. Fiz., 79:11 (2004),  674–679
  40. Low-threshold electron-beam-pumped green quantum-well heterostructure semiconductor lasers

    Kvantovaya Elektronika, 34:10 (2004),  909–911
  41. Observation of a light-induced nonohmic current in a toroidal-moment-possessive nanostructure

    Pis'ma v Zh. Èksper. Teoret. Fiz., 76:7 (2002),  547–549
  42. Cyclotron resonance in the InAs/GaSb heterostructure in an inclined magnetic field

    Pis'ma v Zh. Èksper. Teoret. Fiz., 76:4 (2002),  258–262
  43. Far infrared electroluminescence in cascade type-II heterostructures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 75:8 (2002),  463–466
  44. Blue-green lasers based on short-period superlattices in II—VI compounds

    UFN, 169:4 (1999),  468–471
  45. Simulation of the output characteristics and propagation of radiation from a CO laser with a selection cell

    Kvantovaya Elektronika, 23:6 (1996),  521–526
  46. Ordered quantum-dot arrays in semiconducting matrices

    UFN, 166:4 (1996),  423–428
  47. Infrared and microwave spectroscopy of ozone: historical aspects

    UFN, 164:7 (1994),  725–742
  48. Выращивание квантовых кластеров GaAs$-$AlAs на ориентированных не по (100) фасетированных поверхностях GaAs методом молекулярно-пучковой эпитаксии

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1715–1722
  49. Получение методом молекулярно-пучковой эпитаксии гетероструктур GaSb/InAs/GaSb с высокой подвижностью двумерных электронов

    Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  717–719
  50. Электрические и оптические эффекты при резонансном туннелировании в (Al, Ga)As$-$GaAs-гетероструктурах с двойным барьером

    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  361–363
  51. (In, Ga, Al)As ДГС РО лазеры на длину волны 1.1 мкм с (In, Ga)As напряженной квантовой ямой, ограниченной короткопериодной сверхрешеткой

    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  359–361
  52. (Al, Ga)As ДГС РО лазеры на длины волн 0.8 мкм (175 А/см$^{2}$) и 0.73 мкм (350 A/см$^{2}$) с легированной квантовой ямой

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  201–203
  53. Растекание и поверхностная рекомбинация неравновесных носителей в квантово-размерных (Al, Ga)As ДГС РО лазерах с широким полоском

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  152–158
  54. Энергетическая релаксация и транспорт электронов и дырок в короткопериодичных полупроводниковых сверхрешетках

    Fizika i Tekhnika Poluprovodnikov, 23:9 (1989),  1564–1567
  55. INCREASING OF MOBILITY OF TWO-DIMENSIONAL ELECTRONS ON ALAS/GAAS HETEROBOUNDARY AS COMPARED TO ALGAAS/GAAS IN HETEROSTRUCTURES WITH SELECTIVE DELTA-ALLOYING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:8 (1989),  68–71
  56. Отражение в экситонной области спектра структуры с одиночной квантовой ямой. Наклонное и нормальное падение света

    Fizika i Tekhnika Poluprovodnikov, 22:5 (1988),  784–788
  57. REDUCTION OF THRESHOLD CURRENT-DENSITY IN GAAS-ALGAAS DHS QUANTUM-DIMENSIONAL LASERS(JN=52ACM-2,T=300-K) UNDER THE LIMITATION OF A QUANTUM HOLE BY THE SHORT-PERIOD SUPERLATTICE WITH VARIABLE-PITCH

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1803–1807
  58. Lasers based on heterostructures with active areas limited by multilayered lattices

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  562–565
  59. EFFECT OF GROWTH-CONDITIONS ON THE HUM ADDITIONS IN GAAS ALLOYED LAYERS GROWN BY MBE METHODS

    Zhurnal Tekhnicheskoi Fiziki, 55:1 (1985),  142–147
  60. Galvanomagnetic Effects in $N$-Al$_{0.3}$Ga$_{0.7}$As/GaAs Heterostructures under high Level Doped

    Fizika i Tekhnika Poluprovodnikov, 19:7 (1985),  1199–1203
  61. Intrinsic and Impurity Luminescence in GaAs$-$AlGaAs Structures with Quantum Wells

    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  715–721
  62. Effect of Growth Conditions on the Implantation of Background Impurities into Undoped GaAs Epitaxial Layers Grown by the Method of Molecular-Beam Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  270–274

  63. In memory of Robert Arnol'dovich Suris

    UFN, 194:6 (2024),  677–678
  64. In memory of Vadim L'vovich Gurevich

    UFN, 192:2 (2022),  229–230
  65. Nikolay Nikolaevich Rosanov (on his 80th birthday)

    UFN, 191:4 (2021),  445–446
  66. Aleksandr Aleksandrovich Kaplyanskii (on his 90th birthday)

    UFN, 190:12 (2020),  1343–1344
  67. In memory of Vadim Vasil'evich Afrosimov

    UFN, 189:8 (2019),  901–902
  68. In memory of Zhores Ivanovich Alferov

    UFN, 189:8 (2019),  899–900
  69. Erratum: Simulation of the output characteristics and propagation of radiation from a CO laser with a selection cell [Quantum Electronics 26 (6) 506–511 (1996)]

    Kvantovaya Elektronika, 23:11 (1996),  1056

© Steklov Math. Inst. of RAS, 2024