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Ledentsov Nikolai Nikolaevich

Publications in Math-Net.Ru

  1. The design of an electrically-driven single photon source of the 1.3-$\mu$m spectral range based on a vertical microcavity with intracavity contacts

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021),  23–27
  2. InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)

    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1708–1713
  3. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  98–104
  4. A design and new functionality of antiwaveguiding vertical-cavity surface-emitting lasers for a wavelength of 850 nm

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  85–94
  5. The influence of cavity design on the linewidth of near-ir single-mode vertical-cavity surface-emitting lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  67–75
  6. Vertical-cavity surface-emitting 1.55-$\mu$m lasers fabricated by fusion

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  59–66
  7. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1697
  8. New-generation vertically emitting lasers as a key factor in the computer communication era

    UFN, 181:8 (2011),  884–890
  9. Photoluminescence and the structure of heterointerfaces of (311)A-and (311)B-oriented GaAs/AlAs superlattices

    Pis'ma v Zh. Èksper. Teoret. Fiz., 75:4 (2002),  211–216
  10. Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

    UFN, 171:8 (2001),  857–858
  11. Vertical-cavity emitting devices with quantum-dot structures

    UFN, 171:8 (2001),  855–857
  12. The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells

    UFN, 169:4 (1999),  459–464
  13. Spontaneous ordering of semiconductor nanostructures

    UFN, 167:5 (1997),  552–555
  14. Ordered quantum-dot arrays in semiconducting matrices

    UFN, 166:4 (1996),  423–428
  15. Strained-submonolayer and quantum-dot superstructures

    UFN, 165:2 (1995),  224–225
  16. Выращивание квантовых кластеров GaAs$-$AlAs на ориентированных не по (100) фасетированных поверхностях GaAs методом молекулярно-пучковой эпитаксии

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1715–1722
  17. GROWING COMPOUNDS IN THE SYSTEM OF YB-BA-CU-O WITH THE USE OF A BAO MOLECULAR-BEAM

    Zhurnal Tekhnicheskoi Fiziki, 61:8 (1991),  106–114
  18. Гигантские диффузионные длины неравновесных носителей в квантово-размерных гетероструктурах

    Fizika i Tekhnika Poluprovodnikov, 24:9 (1990),  1691–1693
  19. Получение методом молекулярно-пучковой эпитаксии гетероструктур GaSb/InAs/GaSb с высокой подвижностью двумерных электронов

    Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  717–719
  20. Электрические и оптические эффекты при резонансном туннелировании в (Al, Ga)As$-$GaAs-гетероструктурах с двойным барьером

    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  361–363
  21. (In, Ga, Al)As ДГС РО лазеры на длину волны 1.1 мкм с (In, Ga)As напряженной квантовой ямой, ограниченной короткопериодной сверхрешеткой

    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  359–361
  22. (Al, Ga)As ДГС РО лазеры на длины волн 0.8 мкм (175 А/см$^{2}$) и 0.73 мкм (350 A/см$^{2}$) с легированной квантовой ямой

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  201–203
  23. Растекание и поверхностная рекомбинация неравновесных носителей в квантово-размерных (Al, Ga)As ДГС РО лазерах с широким полоском

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  152–158
  24. EFFECT OF PHOTOINDUCED ELECTRON-HOLE PLASMA DECOMPOSITION IN SINGULAR SELECTIVE-ALLOYED HETEROSTRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:20 (1990),  90–95
  25. REDUCTION OF THRESHOLD CURRENT-DENSITY IN GAAS-ALGAAS DHS QUANTUM-DIMENSIONAL LASERS(JN=52ACM-2,T=300-K) UNDER THE LIMITATION OF A QUANTUM HOLE BY THE SHORT-PERIOD SUPERLATTICE WITH VARIABLE-PITCH

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1803–1807
  26. Intrinsic Luminescence of GaAs$-$Al$_{x}$Ga$_{1-x}$As Sharp HelerojimcLiou

    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  353–356
  27. Lasers based on heterostructures with active areas limited by multilayered lattices

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  562–565
  28. EFFECT OF GROWTH-CONDITIONS ON THE HUM ADDITIONS IN GAAS ALLOYED LAYERS GROWN BY MBE METHODS

    Zhurnal Tekhnicheskoi Fiziki, 55:1 (1985),  142–147
  29. Intrinsic and Impurity Luminescence in GaAs$-$AlGaAs Structures with Quantum Wells

    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  715–721
  30. Effect of Growth Conditions on the Implantation of Background Impurities into Undoped GaAs Epitaxial Layers Grown by the Method of Molecular-Beam Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  270–274

  31. Zhores Ivanovich Alferov (on his 80th birthday)

    UFN, 180:3 (2010),  333–334
  32. Zhores Ivanovich Alferov (on his seventieth birthday)

    UFN, 170:3 (2000),  349–350

© Steklov Math. Inst. of RAS, 2024