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Publications in Math-Net.Ru
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Photoconductivity and infrared-light absorption in $p$-GaAs/AlGaAs quantum wells
Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 629–636
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Investigation of built-in electric fields at the GaSe/GaAs interface by photoreflectance spectroscopy
Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1011–1017
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Highly efficient semiconductor emitter of single photons in the red spectral range
Pis'ma v Zh. Èksper. Teoret. Fiz., 109:3 (2019), 147–151
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Molecular-beam epitaxy of two-dimensional gase layers on GaAs(001) and GaAs(112) substrates: structural and optical properties
Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1152–1158
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Development of the physicochemical properties of the GaSb(100) surface in ammonium sulfide solutions
Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 908–916
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Single-photon emitter at 80 K based on a dielectric nanoantenna with a CdSe/ZnSe quantum dot
Pis'ma v Zh. Èksper. Teoret. Fiz., 108:3 (2018), 201–205
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Nanoheterostructures with CdTe/Zn(Mg)(Se)Te quantum dots for single-photon emitters grown by molecular beam epitaxy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018), 94–102
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Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100)
Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1138–1145
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Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds
Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 56–62
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Photoreflectance of indium antimonide
Fizika Tverdogo Tela, 58:12 (2016), 2307–2313
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Resonance energy transfer in a dense array of II–VI quantum dots
Fizika Tverdogo Tela, 58:11 (2016), 2175–2179
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Isolated quantum emitters originating from defect centers in a ZnSe/ZnMgSSe heterostructure
Pis'ma v Zh. Èksper. Teoret. Fiz., 104:2 (2016), 108–113
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Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds
Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1726
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Heterostructures with CdTe/ZnTe quantum dots for single photon emitters grown by molecular beam epitaxy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:24 (2016), 64–71
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Complex use of the diffraction techniques in depth profiling of the crystal lattice parameter and composition of InGaAs/GaAs gradient layers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016), 40–48
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Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow–green spectral region
Kvantovaya Elektronika, 43:5 (2013), 418–422
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Magnetooptics of (Zn,Cd,Mn)Te/ZnTe heterostructures with a small discontinuity in the valence band potential
Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008), 922–926
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Evidence for Mn$^{2+}$ fine structure in CdMnSe/ZnSe quantum dots caused by their low dimensionality
Pis'ma v Zh. Èksper. Teoret. Fiz., 88:9 (2008), 724–728
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Excitation density distribution in electron-beam-pumped ZnSe semiconductor lasers
Kvantovaya Elektronika, 38:12 (2008), 1097–1100
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Low-threshold electron-beam-pumped green quantum-well heterostructure semiconductor lasers
Kvantovaya Elektronika, 34:10 (2004), 909–911
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