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Krasil'nik Zakharii Fishelevich

Publications in Math-Net.Ru

  1. Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows

    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  766–772
  2. Kinetics of the luminescence response of self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals

    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1150–1157
  3. Enhancement of the luminescence signal from self-assembled Ge(Si) nanoislands due to interaction with the modes of two-dimensional photonic crystals

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  822–829
  4. Emission properties of heavily doped epitaxial indium-nitride layers

    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1395–1400
  5. Comparative analysis of luminescence properties of Ge : Sb layers grown on Ge(001) and Si(001) substrates

    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1354–1359
  6. On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1443–1446
  7. Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1384–1389
  8. Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018),  67–74
  9. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
  10. Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1530–1533
  11. On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  695–698
  12. The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1720–1724
  13. Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1685–1689
  14. Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1497–1500
  15. Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1455–1458
  16. Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1270–1275
  17. On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology

    Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1133–1137
  18. Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers

    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  913–918
  19. Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate

    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  900–903
  20. Near-field mechanism of photoluminescence excitation in quantum well heterostructures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:11 (2011),  890–894
  21. Optical detection of an electric field in a GaAs/AlGaAs $n{-}i{-}n$ heterostructure with double quantum wells

    Pis'ma v Zh. Èksper. Teoret. Fiz., 93:7 (2011),  437–441
  22. Tunable source of terahertz radiation based on the difference-frequency generation in a GaP crystal

    Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008),  905–907
  23. Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:10 (2005),  614–617
  24. Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands

    Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002),  425–429
  25. Optical properties of strained Si1–xGex and Si1–x–yGexCy heterostructures

    UFN, 170:3 (2000),  338–341
  26. Теоретическое и экспериментальное исследование ВАХ и ГАХ горячих дырок кремния

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1315–1323
  27. Индуцированное циклотронное излучение тяжелых дырок в одноосно деформированном германии

    Fizika i Tekhnika Poluprovodnikov, 25:4 (1991),  718–722
  28. Циклотронный резонанс дырок германия с отрицательными массами при ${H}\not\parallel[001]$

    Fizika i Tekhnika Poluprovodnikov, 24:5 (1990),  825–828
  29. Моделирование явлений переноса горячих дырок кремния

    Fizika i Tekhnika Poluprovodnikov, 23:4 (1989),  585–591
  30. Циклотронный резонанс горячих дырок германия

    Fizika i Tekhnika Poluprovodnikov, 22:7 (1988),  1233–1238
  31. Межподзонные оптические переходы горячих дырок в одноосно деформированном германии

    Fizika i Tekhnika Poluprovodnikov, 22:3 (1988),  479–484
  32. Отрицательные массы и отрицательная проводимость на циклотронном резонансе в полупроводниках $p$-типа группы A$^{\text{III}}$B$^{\text{V}}$

    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  101–104
  33. Magnetic Traps of Hot Holes in Silicon

    Fizika i Tekhnika Poluprovodnikov, 21:3 (1987),  484–488
  34. Spectral composition of maser emission on the cyclotron-resonance of heavy holes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:10 (1987),  634–637
  35. Luminescence of Germanium Hot Holes in Submillimeter Wavelength Range

    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  369–377
  36. Nonlinear Cyclotron Resonance of Heavy Holes in Germanium in Streaming in $\mathbf{ E}\parallel\mathbf{H}$ Fields

    Fizika i Tekhnika Poluprovodnikov, 18:5 (1984),  944–946

  37. In memory of Robert Arnol'dovich Suris

    UFN, 194:6 (2024),  677–678
  38. Андрей Георгиевич Забродский, к 75-летию со дня рождения

    Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  893–894
  39. К 80-летию со дня рождения Владимира Алексеевича Сабликова

    Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  481
  40. In memory of Nikolai Nikolaevich Sibeldin

    UFN, 191:3 (2021),  333–334

© Steklov Math. Inst. of RAS, 2024