Greshnov Andrei Anatol'evich

Publications in Math-Net.Ru

1. Competition between isotropic and strongly anisotropic terms in the impact ionization rate of narrow- and middle-gap cubic semiconductors
   
   Fizika i Tekhnika Poluprovodnikov, 58:11 (2024),  620–628
2. On the ballistic flow of two-dimensional electrons in a magnetic field
   
   Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  566–577
3. Edge doping in graphene devices on SiO$_{2}$ substrates
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1681–1685
4. Magnetotransport spectroscopy of the interface, quantum well, and hybrid states in structures with 16-nm-thick multiple HgTe layers
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  947–952
5. Impact ionization rate in direct gap semiconductors
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 105:9 (2017),  554–558
6. Effect of composition fluctuations on radiative recombination in narrow-gap semiconductor solid solutions
   
   Zhurnal Tekhnicheskoi Fiziki, 87:3 (2017),  419–426
7. On the role of two-dimensional phonons in the possibility of the observation of the quantum hall effect in graphene at room temperature
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 100:8 (2014),  577–582
8. Manifestation of a semimetallic state in cyclotron resonance in low-symmetry HgTe-based quantum wells
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 97:2 (2013),  108–113
9. Pure spin currents generation under quantum wells photoionization
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 92:1 (2010),  40–42
10. Cyclotron resonance in the InAs/GaSb heterostructure in an inclined magnetic field
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 76:4 (2002),  258–262