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Vul' Aleksandr Yakovlevich

Publications in Math-Net.Ru

  1. Study of undoped nanocrystalline diamond films grown by microwave plasma-assisted chemical vapor deposition

    Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  49–58
  2. Thermal conductivity of nanofluids: influence of particle shape

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  45–47
  3. Energy spectrum of electrons of deep impurity centers in wide-bandgap mesoscopic semiconductors

    Pis'ma v Zh. Èksper. Teoret. Fiz., 112:12 (2020),  807–812
  4. Photoand cathodoluminescence spectra of diamond single crystals formed by sintering of detonation nanodiamond

    Nanosystems: Physics, Chemistry, Mathematics, 10:1 (2019),  12–17
  5. Evolution of triplet paramagnetic centers in diamonds obtained by sintering of detonation nanodiamonds at high pressure and temperature

    Fizika Tverdogo Tela, 60:4 (2018),  719–725
  6. Chemical composition of surface and structure of defects in diamond single crystals produced from detonation nanodiamonds

    Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018),  21–24
  7. Identification of paramagnetic nitrogen centers (P1) in diamond crystallites synthesized via the sintering of detonation nanodiamonds at high pressure and temperature

    Fizika Tverdogo Tela, 59:6 (2017),  1125–1132
  8. Growth of diamond microcrystals by the oriented attachment mechanism at high pressure and high temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017),  21–29
  9. Electron spin resonance detection and identification of nitrogen centers in nanodiamonds

    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:8 (2009),  473–477
  10. Рецензия на книгу Я.А. Федотова «Интегральная электроника сверхвысоких частот»

    Fizika i Tekhnika Poluprovodnikov, 26:6 (1992),  1156
  11. Вольт-амперные и вольт-фарадные характеристики кремниевых ПДП структур с толщиной диэлектрика менее 50 ангстрем

    Fizika i Tekhnika Poluprovodnikov, 26:1 (1992),  146–149
  12. Кинетика окисления кремния и структура окисных слоев толщиной менее 50 ангстрем

    Fizika i Tekhnika Poluprovodnikov, 26:1 (1992),  111–121
  13. Current passage through a tunneling-transparent insulator

    Fizika Tverdogo Tela, 33:6 (1991),  1784–1791
  14. Полевой транзистор с $p{-}n$-переходом в качестве затвора на основе твердых растворов GaAs$_{1-x-y}$Sb$_{x}$P$_{y}$

    Fizika i Tekhnika Poluprovodnikov, 25:10 (1991),  1718–1720
  15. EFFECT OF HYDROGEN FLOW ON PARAMETERS OF GAAS-LAYERS GROWN BY THE LIQUID-PHASE EPITAXY TECHNIQUE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:13 (1991),  76–81
  16. STATIONARY AVALANCHE MULTIPLICATION OF FLOWS IN METAL-CONDUCTING DIELECTRIC-SEMICONDUCTOR STRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:21 (1990),  15–18
  17. VOLT-AMPERE CHARACTERISTICS OF MTDS STRUCTURES IN THE MODE OF STATIONARY AVALANCHE BREAKDOWN

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1729–1732
  18. PHOTODIODES IN ANISOTYPIC SILICON PDP STRUCTURES

    Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987),  810–812
  19. Effect of Impurity Inhomogeneous Distribution on Photoelectric Characteristics of Resistor Structures Based on GaAs$_{1-x}$Sb$_{x}$ Solid Solutions

    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  804–809
  20. Drift Barriers in Epitaxial Layers of GaAs$_{1-x-y}$Sb$_{x}$P$_{y}$ Pure Solid Solutions

    Fizika i Tekhnika Poluprovodnikov, 21:4 (1987),  662–665
  21. Photomagnetic zero sensor based on the variable semiconductor

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:10 (1987),  591–593
  22. Kinetics of Photoresponse and Mechanism of Current Flow in Silicon Structures of Semiconductor–Thin Dielectric–Semiconductor

    Fizika i Tekhnika Poluprovodnikov, 20:8 (1986),  1444–1450
  23. Correlated Distribution of Impurities in Undoped Epitaxial Layers of GaAs$_{1-x-y}$Sb$_{x}$P$_{y}$ Solid Solutions

    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1227–1233
  24. Analysis of Current-Voltage Characteristic Backward Branches of $p-n$ Junctions in Solid Solutions of A$^{\text{III}}$B$^{\text{V}}$ Compounds

    Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  451–456
  25. Direct observations of high-ohmic areas in epitaxial layers of $Ga\,As_{1-x-y}\,Sb_{x}\,P_{y}$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:15 (1986),  912–916
  26. R-P structures based on $Al\,As-Ga$, $As-Ga\,Sb$ solid-solutions with the spectro-sensitive controlled strip

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:12 (1986),  764–767
  27. Photocurrent intensification in the semiconductor-dielectric-semiconductor structures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  520–524
  28. Photoconductivity of heterostructures with quantum holes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986),  257–261
  29. Surface-Barrier Structures Based on GaAs$_{1-x-y}$Sb$_{x}$P$_{y}$ Solid Solutions

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1081–1086
  30. High-selective photoresistor based on solid-solutions in the $Ga\,As-Ga\,Sb$ system

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:12 (1985),  717–720
  31. Gallium-arsenide photocathode with the integral sensitivity of $3200$ mkA-lm

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:10 (1985),  602–605
  32. Highly-efficient large area phototransistor fast-resposing on the wave length in the $0.9$–$1.1\,\mu m$ range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985),  7–11
  33. Кинетика фотоответа туннельных МДП структур

    Fizika i Tekhnika Poluprovodnikov, 17:8 (1983),  1471–1477
  34. Фотоэлектрические свойства структур металл–диэлектрик–полупроводник с туннельно-прозрачным слоем диэлектрика

    Fizika i Tekhnika Poluprovodnikov, 17:8 (1983),  1361–1376
  35. К вопросу о механизме пробоя $p{-}n$-переходов на основе твердых растворов GaAs$_{1-x}$Sb$_{x}$

    Fizika i Tekhnika Poluprovodnikov, 17:1 (1983),  134–138

  36. Electron paramagnetic resonance detection of the giant concentration of nitrogen vacancy defects in sintered detonation nanodiamonds

    Pis'ma v Zh. Èksper. Teoret. Fiz., 92:2 (2010),  106–110

© Steklov Math. Inst. of RAS, 2024