Andreev Boris Aleksandrovich

Publications in Math-Net.Ru

1. Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  766–772
2. Radiative properties of up-conversion coatings formed on the basis of erbium-doped barium titanate xerogels
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  713–718
3. Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  129–137
4. Emission properties of heavily doped epitaxial indium-nitride layers
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1395–1400
5. Comparative analysis of luminescence properties of Ge : Sb layers grown on Ge(001) and Si(001) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1354–1359
6. Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen
   
   Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1594–1598
7. Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
   
   Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  264–268
8. Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  913–918
9. Dependence of the energy of the resonance states of an acceptor in silicon on the host isotopic mass
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 90:6 (2009),  501–504
10. Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 89:2 (2009),  80–83