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Yassievich Irina Nikolaevna

Publications in Math-Net.Ru

  1. Modification of ge structural-morphological properties in multi-layered nanoperiodic Al$_{2}$O$_{3}$/Ge structure with intermediate Si layers

    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  882–889
  2. Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties

    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  129–137
  3. Simulation of electron and hole states in Si nanocrystals in a SiO$_{2}$ matrix: choice of parameters of the empirical tight-binding method

    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1145–1149
  4. Tight-binding simulation of silicon and germanium nanocrystals

    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1325–1340
  5. Lifetime of excitons localized in Si nanocrystals in amorphous silicon

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  639–642
  6. Radiative and nonradiative recombination of self-trapped exciton on silicon nanocrystal interface

    Pis'ma v Zh. Èksper. Teoret. Fiz., 97:2 (2013),  93–97
  7. Energy transfer between silicon nanocrystals

    Pis'ma v Zh. Èksper. Teoret. Fiz., 93:3 (2011),  162–165
  8. Direct bandgap optical transitions in Si nanocrystals

    Pis'ma v Zh. Èksper. Teoret. Fiz., 90:12 (2009),  856–860
  9. Electron-phonon interaction in non-polar quantum dots induced by the amorphous polar environment

    Pis'ma v Zh. Èksper. Teoret. Fiz., 90:10 (2009),  756–760
  10. Linearly polarized terahertz radiation in uniaxially deformed Ge(Ga) upon the electric breakdown of an impurity

    Pis'ma v Zh. Èksper. Teoret. Fiz., 83:8 (2006),  410–413
  11. Terahertz electroluminescence under conditions of shallow acceptor breakdown in germanium

    Pis'ma v Zh. Èksper. Teoret. Fiz., 79:8 (2004),  448–451
  12. Неравновесное распределение дефектов по энергиям колебаний при многофононной рекомбинации

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1815–1824
  13. Захват электронов на отталкивающие кулоновские центры в германии

    Fizika i Tekhnika Poluprovodnikov, 26:9 (1992),  1569–1573
  14. Polarization spectrum of optically oriented photocarriers in semiconductors in induced optical recombination transitions

    Fizika Tverdogo Tela, 33:1 (1991),  174–181
  15. Разогрев локальных колебаний при безызлучательной рекомбинации и рекомбинационно-стимулированные явления в полупроводниках (обзор)

    Fizika i Tekhnika Poluprovodnikov, 25:9 (1991),  1489–1516
  16. Интерфейсная люминесценция, обусловленная надбарьерным отражением в изотипной гетероструктуре $p$-InAs/$P$-InAsPSb

    Fizika i Tekhnika Poluprovodnikov, 25:2 (1991),  298–306
  17. Резонанс Фано эффекта увлечения электронов фотонами в полупроводниках

    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2193–2197
  18. Узкозонные гетеропереходы II типа в системе твердых растворов GaSb$-$InAs

    Fizika i Tekhnika Poluprovodnikov, 24:8 (1990),  1397–1406
  19. Local vibration heating under nonradiative recombination

    Fizika Tverdogo Tela, 31:11 (1989),  135–148
  20. Новый «электронный» механизм энергетической релаксации локальных колебаний сильно возбужденных дефектов

    Fizika i Tekhnika Poluprovodnikov, 23:12 (1989),  2232–2234
  21. Thermally-assisted field ionization of impurities: multimode consideration

    Fizika Tverdogo Tela, 30:8 (1988),  2498–2504
  22. Multiphonon recombination via deep impurity centers

    Fizika Tverdogo Tela, 30:6 (1988),  1793–1802
  23. Влияние заряда глубокого центра на многофононные процессы термоионизации и захвата электронов

    Fizika i Tekhnika Poluprovodnikov, 22:2 (1988),  262–268
  24. Auger-recombination of exciton-impurity complexes

    Fizika Tverdogo Tela, 29:8 (1987),  2351–2360
  25. Current Induced by Electron Probe in Semiconductor Heterostructures

    Fizika i Tekhnika Poluprovodnikov, 21:9 (1987),  1648–1653
  26. Light electroabsorption by deep impurity centers in semiconductors with a complex valence band structure

    Fizika Tverdogo Tela, 28:7 (1986),  2127–2134
  27. On impurity auger-recombination

    Fizika Tverdogo Tela, 27:8 (1985),  2313–2319
  28. Account of continuous spectrum perturbated wave functions in impurity absorption

    Fizika Tverdogo Tela, 27:5 (1985),  1492–1498
  29. Effects of scattering on shallow neutral center on transport phenomena at low temperatures

    Fizika Tverdogo Tela, 27:1 (1985),  69–76
  30. Auger Recombination via Donors

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1715–1717
  31. Ionization Potentials of Multicharge Deep Impurities in Cubic Semiconductors

    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  96–100
  32. Tunnelling from deep centers in strong electric fields

    Fizika Tverdogo Tela, 26:11 (1984),  3307–3315
  33. Photoionization cross-section for $h$-center-conduction band transition

    Fizika Tverdogo Tela, 26:6 (1984),  1877–1879
  34. Impact Recombination of Electrons via Deep and Shallow Acceptors in $p$-Type Semiconductors

    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  43–48
  35. Thermostimulated emission of electrons in isolators

    Fizika Tverdogo Tela, 25:6 (1983),  1855–1857
  36. Deep $h$-center photoionization in semiconductors

    Fizika Tverdogo Tela, 25:6 (1983),  1650–1659
  37. On Urbach's rule

    Fizika Tverdogo Tela, 25:3 (1983),  727–733
  38. Ударная ионизация дырками в полупроводниках со сложной структурой валентной зоны

    Fizika i Tekhnika Poluprovodnikov, 17:5 (1983),  875–880
  39. Ударная ионизация электронами в полупроводниках A$^{\text{III}}$B$^{\text{V}}$

    Fizika i Tekhnika Poluprovodnikov, 17:1 (1983),  46–51

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