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Publications in Math-Net.Ru
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Vacancy-phosphorus complexes in electron-irradiated floating-zone $n$-type silicon: new points in annealing studies
Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 45
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Interaction rates of group-III and group-V impurities with intrinsic point defects in irradiated Si and Ge
Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1578
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Dynamics of changes in the photoluminescence of porous silicon after gamma irradiation
Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 921–925
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Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system
Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 804–811
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Analysis of integrated thyristor switching-off by a reverse gate pulse current
Zhurnal Tekhnicheskoi Fiziki, 87:11 (2017), 1682–1686
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Radiation-produced defects in germanium: experimental data and models of defects
Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1632–1646
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Some challenging points in the identification of defects in floating-zone $n$-type silicon irradiated with 8 and 15 Mev protons
Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1313–1319
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Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 39–46
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Suppression of the virtual anderson transition in the impurity band of doped quantum well structures
Pis'ma v Zh. Èksper. Teoret. Fiz., 94:2 (2011), 120–124
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Virtual Anderson transition in a narrow impurity band of doped $p$-GaAs/AlGaAs layers
Pis'ma v Zh. Èksper. Teoret. Fiz., 85:3 (2007), 202–207
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Transition from strong to weak localization in the split-off impurity band in two-dimensional p-GaAs/AlGaAs structures
Pis'ma v Zh. Èksper. Teoret. Fiz., 80:1 (2004), 36–40
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Spin-dependent negative photo-conductivity in silicon
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:9 (1985), 568–573
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