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Publications in Math-Net.Ru
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Physics at Moscow State University
UFN, 195:4 (2025), 335–343
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Model of coupled quantum memristors based on a single trapped $^{171}$Yb$^+$ ion
Pis'ma v Zh. Èksper. Teoret. Fiz., 119:5 (2024), 343–347
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Quantum memristors: a new approach to neuromorphic computing
UFN, 194:9 (2024), 905–916
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Influence of Si nanocrystals on polyaniline conductivity
Fizika Tverdogo Tela, 65:4 (2023), 624–628
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Conductivity features of ZnO and NiO nanofiber composites
Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:4 (2023), 20–23
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A hybrid mid-IR photodetector based on semiconductor quantum wells
Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 33–36
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Second-order nanoscale thermal effects in memristive structures based on poly-$p$-xylylene
Pis'ma v Zh. Èksper. Teoret. Fiz., 112:6 (2020), 379–386
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Memristors based on poly($p$-xylylene) with embedded silver nanoparticles
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 25–28
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Poly-para-xylylene-based memristors on flexible substrates
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 40–43
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Electrical properties of indium-oxide thin films produced by plasma-enhanced reactive thermal evaporation
Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1535–1538
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Luminescence of solar cells with $a$-Si:H/$c$-Si heterojunctions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:10 (2017), 95–101
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Effect of cadmium-selenide quantum dots on the conductivity and photoconductivity of nanocrystalline indium oxide
Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 619–623
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Study of the correlation properties of the surface structure of $nc$-Si/$a$-Si : H films with different fractions of the crystalline phase
Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 600–606
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Voltage effect on the sensitivity of nanocrystalline indium oxide to nitrogen dioxide under ultraviolet irradiation
Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015), 97–102
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Features of the structure and defect states in hydrogenated polymorphous silicon films
Pis'ma v Zh. Èksper. Teoret. Fiz., 97:8 (2013), 536–540
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Vibronic and electric properties of semiconductor structures based on butyl-substituted mono-and triphthalocyanine containing erbium ions
Pis'ma v Zh. Èksper. Teoret. Fiz., 85:12 (2007), 791–794
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