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Forsh Pavel Anatol'evich

Publications in Math-Net.Ru

  1. Асимптотический анализ квантового мемристора на ультрахолодном ионе $^{171}$Yb$^+$

    Pis'ma v Zh. Èksper. Teoret. Fiz., 122:12 (2025),  860–864
  2. Physics at Moscow State University

    UFN, 195:4 (2025),  335–343
  3. Model of coupled quantum memristors based on a single trapped $^{171}$Yb$^+$ ion

    Pis'ma v Zh. Èksper. Teoret. Fiz., 119:5 (2024),  343–347
  4. Quantum memristors: a new approach to neuromorphic computing

    UFN, 194:9 (2024),  905–916
  5. Influence of Si nanocrystals on polyaniline conductivity

    Fizika Tverdogo Tela, 65:4 (2023),  624–628
  6. Conductivity features of ZnO and NiO nanofiber composites

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:4 (2023),  20–23
  7. A hybrid mid-IR photodetector based on semiconductor quantum wells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021),  33–36
  8. Second-order nanoscale thermal effects in memristive structures based on poly-$p$-xylylene

    Pis'ma v Zh. Èksper. Teoret. Fiz., 112:6 (2020),  379–386
  9. Memristors based on poly($p$-xylylene) with embedded silver nanoparticles

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  25–28
  10. Poly-para-xylylene-based memristors on flexible substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  40–43
  11. Electrical properties of indium-oxide thin films produced by plasma-enhanced reactive thermal evaporation

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1535–1538
  12. Luminescence of solar cells with $a$-Si:H/$c$-Si heterojunctions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:10 (2017),  95–101
  13. Effect of cadmium-selenide quantum dots on the conductivity and photoconductivity of nanocrystalline indium oxide

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  619–623
  14. Study of the correlation properties of the surface structure of $nc$-Si/$a$-Si : H films with different fractions of the crystalline phase

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  600–606
  15. Specific features of the optical and photoelectric properties of nanocrystalline indium oxide

    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1184–1188
  16. Voltage effect on the sensitivity of nanocrystalline indium oxide to nitrogen dioxide under ultraviolet irradiation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015),  97–102
  17. Structure and electrical properties of liquid crystal films grown by the Langmuir technology

    Fizika Tverdogo Tela, 56:2 (2014),  371–374
  18. Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:4 (2014),  1–8
  19. Temperature dependence of the conductance and capacitance of Langmuir films of liquid crystals

    Fizika Tverdogo Tela, 55:3 (2013),  552–554
  20. Features of the structure and defect states in hydrogenated polymorphous silicon films

    Pis'ma v Zh. Èksper. Teoret. Fiz., 97:8 (2013),  536–540
  21. Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties

    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1283–1287
  22. Conductivity of nanocrystalline ZnO(Ga)

    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  637–641
  23. Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties

    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  769–774
  24. Specific features of photoelectric and optical properties of amorphous hydrogenated silicon films produced by plasmochemical deposition from monosilane–hydrogen mixture

    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  518–523
  25. Vibronic properties of organic semiconductors based on phthalocyanine complexes with asymmetrically distributed electron density

    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  795–800
  26. Photoconductivity of two-phase hydrogenated silicon films

    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  513–516
  27. Effect of thermal oxidation on charge carrier transport in nanostructured silicon

    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  367–371
  28. Vibronic and electric properties of semiconductor structures based on butyl-substituted mono-and triphthalocyanine containing erbium ions

    Pis'ma v Zh. Èksper. Teoret. Fiz., 85:12 (2007),  791–794


© Steklov Math. Inst. of RAS, 2026