|
|
Publications in Math-Net.Ru
-
Effect of buffer layer on the characteristics of GaPN layers grown by molecular beam epitaxy on silicon substrates
Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025), 7–10
-
Terahertz polarization converters: physical principles, design, and applications
UFN, 195:3 (2025), 311–333
-
Formation of InAs$_{1-x}$N$_x$ islands and InAs stem-assisted InAs$_{1-x}$N$_x$ nanowires by means of epitaxial growth on silicon
Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024), 7–10
-
Formation of single and heterostructured nanowires based on $\mathrm{InAs}_{1-x}\mathrm{P}_x$ solid solutions on $\mathrm{Si}(111)$
Fizika i Tekhnika Poluprovodnikov, 57:7 (2023), 526–529
-
Optimization of the buffer dielectric layer for the creation of low-defect epitaxial films of the topological insulator Pb$_{1-x}$Sn$_x$Te with $x\ge$ 0.4
Fizika i Tekhnika Poluprovodnikov, 56:7 (2022), 642–645
-
Structural characterization of Pb$_{0.7}$Sn$_{0.3}$Te crystalline topological insulator thin films grown on Si(111)
Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 625–628
-
Energy-gap opening near the Dirac point after the deposition of cobalt on the (0001) surface of the topological insulator BiSbTeSe$_{2}$
Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 859–864
-
A study of the crystal structure of Co$_{40}$Fe$_{40}$B$_{20}$ epitaxial films on a Bi$_{2}$Te$_{3}$ topological insulator
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:5 (2018), 10–15
-
Growth of Y$_{3}$Fe$_{5}$O$_{12}$/GaN layers by laser molecular-beam epitaxy and characterization of their structural and magnetic properties
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016), 72–78
-
Binary DOE with elongated focal depth to focus terahertz free electron laser radiation (NovoFEL)
Computer Optics, 39:1 (2015), 58–63
-
Control of transverse modal spectrum of terahertz laser irradiation by binary silicon optical elements
Computer Optics, 38:4 (2014), 763–769
-
Silicon optics for focusing of terahertz laser radiation in a given two-dimensional domain
Computer Optics, 37:4 (2013), 464–4700
-
Magnetic order in an MnF2 epitaxial layer with the orthorhombic structure
Pis'ma v Zh. Èksper. Teoret. Fiz., 83:4 (2006), 185–188
© , 2025